Allicdata Part #: | TISP5070H3BJR-ND |
Manufacturer Part#: |
TISP5070H3BJR |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Bourns Inc. |
Short Description: | SURGE SUPP -58V UNIDIR DO-214AA |
More Detail: | N/A |
DataSheet: | TISP5070H3BJR Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Breakover: | 70V |
Voltage - Off State: | 58V |
Voltage - On State: | 3V |
Current - Peak Pulse (8/20µs): | 300A |
Current - Peak Pulse (10/1000µs): | 100A |
Current - Hold (Ih): | 150mA |
Number of Elements: | 1 |
Capacitance: | 300pF |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Description
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Introduction
Thyristors are power-switching electronic components that are used in a wide variety of electronic devices. They can be used to switch a circuit on or off, manage current flow, and control the speed of motor drives. The TISP5070H3BJR thyristor is a fast switching, high current thyristor module. This module has been designed for a wide variety of applications ranging from telecommunications to industrial motor drives. This article will explain the application field and working principle of the TISP5070H3BJR thyristor.Application Field of TISP5070H3BJR
The TISP5070H3BJR is a fast switching, bidirectional RF (Radio Frequency) power switch module. It is suitable for applications such as telecommunications, industrial motor drives, and other RF power applications. It is also suitable for high power RF switches in SONET/SDH (Synchronous Optical Network / Synchronous Digital Hierarchy) and RF power supply systems. The TISP5070H3BJR has a high withstand voltage rating of 6500V and a maximum switching current of 6A. These power ratings make it suitable for a wide range of RF power applications, such as switching power from an RF transmitter, switching power for a telecom switch, and controlling current flow in a motor drive system.The TISP5070H3BJR is capable of very fast switching speeds, with a maximum switching time of 110ns. This makes the thyristor ideal for high frequency RF power applications such as those found in SONET/SDH systems.Working Principle of TISP5070H3BJR
The working principle of the TISP5070H3BJR is based on the principle of a thyristor. Thyristors are four-layer semiconductor devices that, when triggered, can control the amount of current that flows through them. The TISP5070H3BJR has two input terminals, a control terminal and a power terminal. When a trigger voltage is applied to the control terminal, a gate current flows between the control and power terminal, turning the thyristor “on”. The thyristor will then remain “on” until the applied voltage is removed. This allows the thyristor to control the amount of current that flows through it.The TISP5070H3BJR is a high current thyristor, which means that it can control higher amounts of current than a standard thyristor. This makes the thyristor suitable for applications with higher power requirements, such as industrial motor drives.Conclusion
The TISP5070H3BJR thyristor is a fast switching, high current thyristor module. Its high current rating makes it suitable for a wide range of RF power applications. The TISP5070H3BJR works by controlling the amount of current flowing through it. This makes it ideal for controlling current in applications such as industrial motor drives.The specific data is subject to PDF, and the above content is for reference
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