TISP4360MMBJR-S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thyristors and TVSs are semiconductor devices that are similar in characteristics and functionality. They are commonly used in a wide range of applications, such as rectifying AC power for AC/DC power conversion, switching motor loads, controlling power flow, and providing surge protection against voltage spikes. In particular, the TISP4360MMBJR-S device is a thyristor-based transient voltage suppression device (TVS) that offers high surge capability up to 40 A for 8/20 microseconds, excellent ESD protection, and high clamping voltage with low leakage current. It is particularly suitable for automotive applications offering surge protection.

The TISP4360MMBJR-S is a MOSFET-type thyristor, or a type of bidirectional semiconductor device, which is designed to protect sensitive electronic components from damages caused by over-voltage transients and electro-static discharges (ESDs). The device contains two terminals connected to the circuit, typically referred to as anode and cathode, and its functioning is based on the triggering of a thyristor by a positive or negative voltage applied to its control gate. The control gate is effectively the input port of the device, and when an appropriate voltage level is applied to it, the device turns "ON" allowing current to flow from the anode to the cathode and vice versa.

Once triggered, the TISP4360MMBJR-S will remain "ON" until a certain reverse voltage is reached at the anode and cathode terminals, at which point the device will turn "OFF". This off-state removes the current flow between the anode and cathode and disconnects the circuit from the power source. The device also offers high surge capability up to 40 A for 8/20 microseconds, making it ideal for automotive applications where surges of high current are experienced.

In terms of its working principle, the TISP4360MMBJR-S device operates as a bidirectional semiconductor switch. In its "OFF" state, the device has a very high impedance between its anode and cathode, preventing any current flow and thus disconnecting the circuit from the power source. The device is triggered to turn "ON" by either a positive or negative gate voltage. Once triggered, the device will remain on until it experiences a certain reverse voltage, at which point it will turn "OFF".

The TISP4360MMBJR-S device has multiple application fields, including automotive systems for surge protection, EMC filters, power supply protection, rectification and boosting applications, as well as other DC-DC power conversion applications. Its high surge capability, low leakage current, and excellent protection against ESD make it an ideal choice for these applications. It is also suitable for telecom, audio, industrial, and consumer industries, amongst others.

In conclusion, the TISP4360MMBJR-S is a MOSFET-based thyristor or bidirectional semiconductor switch designed to offer high surge protection and ESD protection. It is suitable for a wide range of applications, including automotive, telecom, audio, industrial, and consumer industries, amongst others, and has a working principle based on its triggering action and reverse voltage protection.

The specific data is subject to PDF, and the above content is for reference