TMBT3904,LM Allicdata Electronics
Allicdata Part #:

TMBT3904LMTR-ND

Manufacturer Part#:

TMBT3904,LM

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 50V 0.15A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 50V 150mA 300MHz 320m...
DataSheet: TMBT3904,LM datasheetTMBT3904,LM Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02024
6000 +: $ 0.01826
15000 +: $ 0.01588
30000 +: $ 0.01429
75000 +: $ 0.01270
150000 +: $ 0.01058
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 320mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and holes as charge carriers. The TMBT3904 is a PNP plastic-encapsulated BJT made by STMicroelectronics. It is part of a family of high-gain, high-power transistors meant for applications that require large amounts of current or high voltages. This includes RF amplification and switching, audio amplification, and power amplification used in consumer electronics such as televisions and stereos.

A PNP transistor consists of three layers of semiconductor material. The outer layers are called the collector and emitter, and the middle layer is referred to as the base. A current entering the base from a voltage or current source is amplified through the collector and emitter terminals. A PNP transistor has two terminals (collector and emitter) and is positive-bias when turned on. This means that when the base voltage is made more positive than the emitter voltage, the transistor will turn on.

The characteristics of the TMBT3904 are:

  • Collector-emitter voltage (Vce): 30V
  • Collector-base voltage (Vcb): 40V
  • Emitter-base voltage (Veb): 5V
  • Continuous collector-current Ic (Max): 10A
  • Collector power dissipation Pd (Max): 150W
  • Package: TO-220

The TMBT3904 is suitable for applications such as RF amplification, power switching, and audio, as it can handle up to 10A of collector current. This makes it a good choice for high-power amplifiers or power supplies. It is also useful for switching between different voltage sources, such as battery backup systems, since it can handle up to 40V of collector-base voltage.

The working principle behind the TMBT3904 is the same as any other BJT has. A small current entering the base of the transistor is amplified through the collector-emitter circuit. This happens because electrons entering the base are drawn to the collector and holes entering at the emitter are pushed by the electric field to the collector. This creates a current flow between the collector and emitter, which is greater than the small current entering the base.

The TMBT3904 is a versatile, high-power transistor that can be used in a variety of applications. Its high collector current allows for high-power amplifiers and switching, and its wide range of voltage and power ratings makes it suitable for many different applications. It is a good choice for projects that require high power or current demands.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "TMBT" Included word is 2
Part Number Manufacturer Price Quantity Description
TMBT3904,LM Toshiba Semi... 0.02 $ 1000 TRANS NPN 50V 0.15A SOT23...
TMBT3906,LM Toshiba Semi... 0.02 $ 1000 TRANS PNP 50V 0.15A SOT23...
Latest Products
BC807-16W/MIX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC807-16W/MIX Allicdata Electronics
CP547-MJ11015-CT

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

CP547-MJ11015-CT Allicdata Electronics
CP547-CEN1103-WS

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

CP547-CEN1103-WS Allicdata Electronics
TIP35C SL

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TIP35C SL Allicdata Electronics
JAN2N3634

TRANS PNP 140V 1ABipolar (BJT) Transisto...

JAN2N3634 Allicdata Electronics
BULB7216-1

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...

BULB7216-1 Allicdata Electronics