Allicdata Part #: | TMBT3904LMTR-ND |
Manufacturer Part#: |
TMBT3904,LM |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 50V 0.15A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 300MHz 320m... |
DataSheet: | TMBT3904,LM Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02024 |
6000 +: | $ 0.01826 |
15000 +: | $ 0.01588 |
30000 +: | $ 0.01429 |
75000 +: | $ 0.01270 |
150000 +: | $ 0.01058 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 320mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and holes as charge carriers. The TMBT3904 is a PNP plastic-encapsulated BJT made by STMicroelectronics. It is part of a family of high-gain, high-power transistors meant for applications that require large amounts of current or high voltages. This includes RF amplification and switching, audio amplification, and power amplification used in consumer electronics such as televisions and stereos.
A PNP transistor consists of three layers of semiconductor material. The outer layers are called the collector and emitter, and the middle layer is referred to as the base. A current entering the base from a voltage or current source is amplified through the collector and emitter terminals. A PNP transistor has two terminals (collector and emitter) and is positive-bias when turned on. This means that when the base voltage is made more positive than the emitter voltage, the transistor will turn on.
The characteristics of the TMBT3904 are:
- Collector-emitter voltage (Vce): 30V
- Collector-base voltage (Vcb): 40V
- Emitter-base voltage (Veb): 5V
- Continuous collector-current Ic (Max): 10A
- Collector power dissipation Pd (Max): 150W
- Package: TO-220
The TMBT3904 is suitable for applications such as RF amplification, power switching, and audio, as it can handle up to 10A of collector current. This makes it a good choice for high-power amplifiers or power supplies. It is also useful for switching between different voltage sources, such as battery backup systems, since it can handle up to 40V of collector-base voltage.
The working principle behind the TMBT3904 is the same as any other BJT has. A small current entering the base of the transistor is amplified through the collector-emitter circuit. This happens because electrons entering the base are drawn to the collector and holes entering at the emitter are pushed by the electric field to the collector. This creates a current flow between the collector and emitter, which is greater than the small current entering the base.
The TMBT3904 is a versatile, high-power transistor that can be used in a variety of applications. Its high collector current allows for high-power amplifiers and switching, and its wide range of voltage and power ratings makes it suitable for many different applications. It is a good choice for projects that require high power or current demands.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TMBT3904,LM | Toshiba Semi... | 0.02 $ | 1000 | TRANS NPN 50V 0.15A SOT23... |
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