TPC36AHM3_A/H

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TVS – Diodes are semiconductor devices that attempt to limit overvoltages by clamping or shorting to ground a surge of current. The TPC36AHM3_A/H series is specifically designed to protect systems from high-energy surge transients. With low capacitance and low working voltage, it provides optimized protection for high-speed signal lines, while its small size assists in shrinking design size. This article will discuss the application fields and working principles of the TPC36AHM3_A/H series.

The TPC36AHM3_A/H series is specifically designed to protect high-frequency signal lines in applications ranging from automotive electronics systems to telecommunications equipment. This device series is capable of responding quickly to hard transients, while providing excellent over-current protection. It is an ideal component for improving the overall protection in systems and supporting traces subjected to overvoltage conditions caused by HEMP, EFT, and Lightning. These devices provide excellent ESD protection that takes into account the speed of the signal line.

The TPC36AHM3_A/H series consists of two distinctly different types of devices: the A type for clamping protection, and the H type for switching protection. The PN junction type of the A type and the MOSFET type of the H type each have different functional principles. The A type of devices is designed for clamping action protection, and uses a PN junction in the construction. When the voltage across the device exceeds the triggering voltage level, the PN junction instantly begins to conduct current, providing a low impedance path to ground. This results in a clamping or limiting of the voltage across the device.

On the other side, the H type of devices is designed to provide a switching type of protection. These are typically based on either a MOSFET or a Thyristor. When a transient event occurs, the voltage across the device rises and quickly reaches the triggering voltage. This causes the MOSFET or Thyristor to switch on and provide a low impedance path to ground. This effectively shorts out the system surge, resulting in a very fast response time.

In order to effectively use the TPC36AHM3_A/H series, a number of parameters must be taken into consideration. These include the reverse standoff voltage, the peak pulse power, the peak pulse current, and the capacitance. The reverse standoff voltage determines the triggering voltage of the device, after which the device will begin to conduct current. The peak pulse power and peak pulse current are related parameters. The peak pulse power determines the amount of power that can be dissipated by the device before it is damaged. The peak pulse current is the maximum current that the device can handle before it is damaged. The capacitance of the device affects the speed of the response and therefore should always be taken into consideration when designing a protection circuit.

In conclusion, the TPC36AHM3_A/H series protects systems from high-energy surge transients. The A type of these devices have a PN junction structure and provide clamping protection; while the H type of these devices are constructed from MOSFETs or Thyristors and provide switching protection. It is important to take into consideration the various parameters of the device when designing a protection circuit. This will ensure that the device can meet the specific requirements of the application.

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