TPSD107M010H0100

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Tantalum capacitors are one of the most efficient and reliable technologies available for power electronics. They offer high capacitance with low leakage current, as well as low equivalent series resistance and excellent temperature stability. The TPSD107M010H0100 is a precision, solid-state, tantalum capacitor that can be used in a variety of applications. This article will discuss the characteristics of the TPSD107M010H0100, its application field and the working principle behind it.

The TPSD107M010H0100 has a temperature range of -55°C to 125°C, with a capacitance of 10µF, a voltage rating of 10V, and a maximum ESR of 0.009Ω. It is available in package sizes ranging from 0603 (1.6x0.8mm) to 1210 (3.2x2.5mm), making it suitable for a wide variety of designs. The device also features a high stability, with a ±10% capacitance change tolerance at 25°C and an aging rate of ≤2%/1,000 hrs over temperature range, giving it superior aging performance. The TPSD107M010H0100 is also polarity reversible, meaning it can be used to handle both AC and DC signals.

TPSD107M010H0100 has a wide range of applications, including AC/DC coupling, decoupling, voltage-drop compensation, and signal stability in power supplies and high-power systems. The device is often used as a buffer between sensitive circuits and high current conductors, and is also used in noise suppression circuits. In addition, the device is ideal for high-voltage, high-temperature and other harsh environmental applications, as the device has a high durability and long shelf life.

The working principle of the TPSD107M010H0100 is that of any other tantalum capacitor. It uses a tantalum pentoxide dielectric, which provides one of the highest dielectric constant ratios among all other dielectric materials. This material has a low leakage current, which helps to reduce the charge-discharge time. The device also features a low equivalent series resistance (ESR), providing better AC performance and improved electromechanical stability. The capacitance of the device is determined by the combination of the tantalum pentoxide dielectric material, the the positive and negative electrodes, and the physical capacitance. The capacitance of the device is determined by the ratio of the surface area of the negative and positive electrodes, and the dielectric material between them. The device also feature a high resistance to dielectric absorption (DAR) due to its high grain boundary structure.

Overall, the TPSD107M010H0100 is a robust and reliable precision tantalum capacitor that can be used in a wide variety of applications. It has a wide temperature range, a high durability, and excellent aging performance, making it suitable for a variety of power electronic applications. Its low ESR, high capacitance and low leakage current also makes it suitable for AC and DC coupling, decoupling, voltage-drop compensation and noise suppression circuits. The device works on the same principle as any other tantalum capacitor, and its capacitance is determined by the ratio of the surface area of the negative and positive electrode and the dielectric material between them.

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