TPSD227K010R0100 Capacitors

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Tantalum capacitors are uniquely suited for certain applications due to their compact size and high capacitance properties. TPSD227K010R0100 is an ultra-low impedance chip tantalum capacitor designed specifically for high-temperature, high-power applications. Its application field and working principle are detailed below.

Application Field

TPSD227K010R0100 capacitors are generally used in low-leakage, high-temperature applications. Examples include automotive applications, LED lighting, industrial power supply, telecom power supply and DC-DC converters where its ultra-low impedance is beneficial. They are also suitable for a wide range of military applications. Beyond these, they find use in very high energy density energy storage, large capacitor application, in circuit board powerline suppression, primary switching power supply filter and other high current and high voltage capacitive applications.

Working Principle

TPSD227K010R0100 capacitors are constructed with a tantalum anode and a manganese dioxide cathode. When voltage is applied across the electrodes, a chemical reaction takes place between the tantalum anode and the manganese dioxide cathode. This reaction forms a thin oxide layer that serves as the dielectric and increases capacitance. In addition, the oxide layer also works as a current limiter, reducing the possibility of short-circuiting or overcharge.

The oxide layer also increases performance in terms of leakage current. Leakage current is the flow of an electric current when the capacitor is not actively charged. Low ESR and a low breakdown voltage further guarantee long-term reliability and stability. These features make TPSD227K010R0100 capacitors very suitable for high-temperature, high-power applications.

Conclusion

TPSD227K010R0100 capacitor is an ultra-low impedance chip tantalum capacitor that is specially designed for high-temperature, high-power applications. It is used in automotive, LED lighting, telecom, industrial, military and other high current and high voltage applications. Its construction consists of a tantalum anode and a manganese dioxide cathode, with a thin oxide layer formed between them. The oxide layer serves as a dielectric, formed by a chemical reaction; it also increases capacitance, limits current and reduces leakage current. Low ESR and a low breakdown voltage also guarantee its long-term reliability and stability for high-temperature, high-power applications.

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