TPSMA20HE3_A/I Allicdata Electronics
Allicdata Part #:

TPSMA20HE3_A/I-ND

Manufacturer Part#:

TPSMA20HE3_A/I

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 16.2V 29.1V DO214AC
More Detail: N/A
DataSheet: TPSMA20HE3_A/I datasheetTPSMA20HE3_A/I Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 29.1V
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 185°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 13.7A
Series: Automotive, AEC-Q101, PAR®
Voltage - Breakdown (Min): 18V
Voltage - Reverse Standoff (Typ): 16.2V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Triple avalanche in parallel with single avalanche (TPSMA20HE3_A/I) is one of the most versatile and powerful surge protection components available in the market today. TVS-diodes are electrical components made up of materials with very high breakdown voltage that can protect sensitive electronic circuitry from high voltage surges. The TPSMA20HE3_A/I is specifically designed to provide reliable surge protection for a variety of applications.

The TPSMA20HE3_A/I is a three-pin component and consists of two positive-intrinsic semiconductor layers (PIS) and one intrinsic semiconductor layer (IS). The PIS layers are separated by an avalanche region which allows for effective breakdown. The main function of the TPSMA20HE3_A/I is to protect sensitive circuits from over-voltage surges. It has a wide range of application fields that include telecommunications, computer systems, automotive, industrial, consumer electronics, etc.

The TPSMA20HE3_A/I works on the principle of Dual Avalanche Breakdown (DAB). In this type of breakdown, two intrinsic semiconductor layers (IS) are formed at the same time in the circuit. An avalanche is triggered in each of these layers and both are in-series with the other. When a high voltage surge is experienced, it is the sum of the two breakdown voltages that provide the total protection.

The TPSMA20HE3_A/I is designed for low voltage applications, with an operating voltage range of 6-35V DC. The device has high surge energy capacity and a wide range of operating temperature from -40°C to +125°C. It also has a low leakage current and a low on-resistance which makes it suitable for high frequency applications. It offers excellent protection against over-voltage, over-current, short-circuit and ESD protection.

The TPSMA20HE3_A/I has proven itself to be a reliable and versatile surge protection device due to its wide-ranging application fields and dependability. It provides excellent protection with high surge energy capacity, offering reliable and efficient protection. It is an ideal choice for various electrical applications as it offers cost-effective and reliable protection.

The specific data is subject to PDF, and the above content is for reference

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