TPSMD10A Allicdata Electronics
Allicdata Part #:

F6557TR-ND

Manufacturer Part#:

TPSMD10A

Price: $ 0.30
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 10V 17V DO214AB
More Detail: N/A
DataSheet: TPSMD10A datasheetTPSMD10A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.28005
6000 +: $ 0.26672
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Voltage - Clamping (Max) @ Ipp: 17V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 176.5A
Series: Automotive, AEC-Q101, TPSMD
Voltage - Breakdown (Min): 11.1V
Voltage - Reverse Standoff (Typ): 10V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Introduction to TVS-Diodes:


TVS-Diodes are a special type of electrical device used to protect sensitive electronics from high voltages and current surge. The technology behind TVS-Diodes is simple, yet effective in protecting electronic components from the adverse effects of overvoltage, often caused by electrostatic discharge (ESD). TVS-Diodes are designed to function in a similar way to traditional diodes, reversing current flow when the occurrent passes the reverse breakdown voltage of a diode junction. Even though different structures exist in terms of configuration, the conventional operation of a TVS-Diode is the same: During normal operation the cathode and anode terminals are connected, and when a transient voltage occurs, the diode triggers the internal avalanche effect, which causes the breakdown of devices and reverse current direction.

TPSMD10A:

The TPSMD10A is a high voltage, low capacitance TVS diode manufactured by the Texas Instruments Co. It is used as a protective device for receivers and other sensitive components in various types of electronic equipment. This device is designed with a Bilevel Silicon Diode structure, which has a reverse breakdown voltage of 10V. It also features a high capacitance/capacitive drain-source on-state resistance characteristics that produce high performance in transient suppression.

TPSMD10A Application Field & Working Principle:

The TPSMD10A TVS Diode is typically used as a protective device against high voltage and ESD in various applications. It can be used to protect receivers, transistors, integrated circuits, and other sensitive components in communication systems, industrial equipment, computer communication equipment, and automotive applications from overvoltage.The working principle of the TPSMD10A is similar to that of other TVS-Diodes. When an unexpected voltage surge or ESD occurs, the diode clamps it to a safe level, often specified as the reverse breakdown voltage of the diode. The diode’s high capacitance/capacitive drain-source on-state resistance characteristics enable the device to absorb more power than other types of TVS-Diodes. During normal operation, the TPSMD10A acts as an open circuit with no current flowing, while during a surge, the diode will immediately clamp it to a safe level in order to protect the circuit.

TPSMD10A Benefits:

The TPSMD10A provides many advantages, including its ability to absorb more power than other types of TVS-Diodes, its high capacitance/capacitive drain-source on-state resistance characteristics, and its low capacitance. This device can also provide protection against a variety of high voltages and ESD surges while providing low leakage and low capacitance. In addition, the device is small and compact, making it easy to integrate into existing systems. Furthermore, the TPSMD10A operates at high speeds to ensure instantaneous protection in transient conditions.


Conclusion:

The TPSMD10A is a high voltage, low capacitance TVS-Diode manufactured by the Texas Instruments Co. It is designed with a Bilevel Silicon Diode structure, which has a reverse breakdown voltage of 10V, and it also features a high capacitance/capacitive drain-source on-state resistance characteristics that produce high performance in transient suppression. The TPSMD10A is typically used as a protective device against high voltage and ESD in various applications, and its high performance and low capacitance make it an ideal choice for protecting receivers, transistors, integrated circuits, and other sensitive components in communication systems, industrial equipment, computer communication equipment, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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