TR236

Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	1.3V @ 600mA, 2.5A
Current - Collector Cutoff (Max):	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	8 @ 2.5A, 5V
Power - Max:	70W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole

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Introduction

TR236 is an NPN/PNP bipolar junction transistor (BJT) used for general purpose switching and amplification tasks. It is a three-terminal single device, composed of an N-type semiconductor layer sandwiched between two P-type layers. This type of transistor has two junctions, known as the emitter-base junction and the collector-base junction, which are separated by an intrinsic semiconductor layer.

Application Field

TR236 is used in many electronic applications, such as audio frequency amplifiers and amplifiers for both low-noise and frequency modulation (FM) applications. The device can also be used in automotive amplifiers, radio-frequency (RF) power amplifier (PA) circuitry, and audio oscillators and mixers. This type of transistor is known for its high current gain and low noise when used in RF amplification and power switching applications.TR236 can also be used to detect and amplify electrical signals in automotive engine management systems. It is suitable for the design of power drivers and motor control circuits. This device can also be utilized in various signals transmission circuits, such as oscillators, switching circuits, and in the development of logic gates for embedded systems.

Working Principle

TR236 is based on the semiconductor principle, which is the basis for understanding the operation of a transistor. In a BJT, current flow is often considered to move from the emitter to the collector through a conducting channel, passing through an intrinsic semiconductor layer known as the base. When the voltage of the base is increased, the current through this conducting channel increases, resulting in an increased voltage across the load. When the voltage of the base is decreased, the current passing through the conducting channel decreases as well, resulting in a decreased voltage across the load.In order for the transistor to amplify a signal, current must flow from the emitter to the collector without going through the base. This occurs when current from the emitter passes around the intrinsic semiconductor layer, allowing a small change in the base voltage to cause a large change in the collector current. This is the basis of how TR236 acts as an amplifier.When the transistor is used as a switch, the voltage of the base is used to control the flow of current from the emitter to the collector. When the base voltage is high, current will flow freely and the transistor is said to be saturated. When the base voltage is low, current will not flow between the emitter and collector and the transistor is said to be cut-off.

Conclusion

TR236 is a versatile NPN/PNP BJT, suitable for use in many different applications, from amplifiers to switches. It is based on the semiconductor principle, and uses the base voltage to control the flow of current from the emitter to the collector. This transistor can provide amplification and switching for audio frequency, automotive engine management systems, RF power amplifier, and embedded systems.

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