Allicdata Part #: | TRS8E65CS1Q-ND |
Manufacturer Part#: |
TRS8E65C,S1Q |
Price: | $ 5.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE SCHOTTKY 650V 8A TO220-2L |
More Detail: | Diode Silicon Carbide Schottky 650V 8A (DC) Throug... |
DataSheet: | TRS8E65C,S1Q Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 4.94966 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650V |
Current - Average Rectified (Io): | 8A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 90µA @ 650V |
Capacitance @ Vr, F: | 44pF @ 650V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2L |
Operating Temperature - Junction: | 175°C (Max) |
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The TRS8E65C,S1Q diode is part of the broad family of single rectifiers. A single rectifier has just one diode that allows the current to flow in one direction, while blocking current from flowing the opposite way. The TRS8E65C,S1Q diode is a Fast Switching Diode, capable of rapidly switching between a conducting and nonconducting state.
The TRS8E65C,S1Q diode is designed for a variety of industrial and telecommunications applications. It is widely used in power supplies and converters, DC to DC drives, and power transistors. In addition, it is often found in interface circuits, lighting systems, and power regulators. The TRS8E65C,S1Q diode is also used in radio frequency applications to prevent interference.
The TRS8E65C,S1Q diode is unique in its construction and working principles. It consists of two main metallized layers of polysynthetic material, separated by a gap. This gap forms a depletion layer, where electrons and holes can recombine. When a voltage is applied across the depletion layer, the electronhole pairs are forced apart and current flows.
At the same time, the electronhole pairs are attracted to the opposite sides of the gap. As the current flows through the gap, the electron holes are forced against the metallized layers, ensuring the current flows in one direction only. The combination of these two elements the rapid repulsion of electron-holes in the gap and the attraction of the electronholes to opposite sides of the gap form the basis of the TRS8E65C,S1Q diode’s fast switching ability.
The TRS8E65C,S1Q diode is a low wattage diode, rated for up to 1 watt. It is suitable for use in a variety of systems, ranging from 12V through 200V. It is a robust and reliable component, with a long-lasting lifespan and a high surge capability.
In conclusion, the TRS8E65C,S1Q diode is one of the most popular diodes in the single rectifier family. It is a fast switching diode capable of rapidly switching between a conducting and nonconducting state. It is widely used in a variety of applications and is suitable for use in systems between 12V and 200V. It is a robust and reliable component, with a long-lasting lifespan and a high surge capability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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TRS8E65C,S1Q | Toshiba Semi... | 5.5 $ | 1000 | DIODE SCHOTTKY 650V 8A TO... |
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