TS13005CK B0G Allicdata Electronics
Allicdata Part #:

TS13005CKB0G-ND

Manufacturer Part#:

TS13005CK B0G

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TRANSISTOR, NPN, 400V, 3A, 5A/A
More Detail: Bipolar (BJT) Transistor NPN 400V 3A 20W Through ...
DataSheet: TS13005CK B0G datasheetTS13005CK B0G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.11163
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 425mA, 2V
Power - Max: 20W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Description

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The TS13005CK B0G is one of the most popular and widely used transistors in the field of single bipolar (BJT) transistors. It is used in many applications including radio frequency amplification, switched-mode power supplies, analogue amplifier stages, low-noise amplifiers and precision current mirror circuit. It is also used in high-speed and high-power applications, due to its very good frequency response and high current gain.

The TS13005CK B0G is a NPN, silicon-based transistor with a 230 Freescale process, and has a collector current of 25A, a collector-base voltage of 75V, an emitter-base voltage of 6V and a collector-emitter voltage of 50V. The transistor features a maximum voltage and current gain of 200 and 3000, respectively. It also has a high-frequency response of up to 10MHz and a power dissipation of 310mW. The package in which the transistor is supplied is a TO-220AB package.

The working principle of the TS13005CK B0G transistor relies on the movement of electrons between the emitter and the collector. When current is applied to the base, it creates an electric field between the emitter and the collector, which causes the electrons to move from the emitter to the collector. The resulting flow of electrons produces a current which is amplified by the transistor and can be used to drive other components or circuits.

The TS13005CK B0G transistor is most commonly used in applications requiring high-power, high-current and high-speed performance. Some of its applications include switch-mode power supplies, high-speed switching circuits, linear amplifiers, RF power amplifiers and power switching circuits, among many others. It is also often used for audio amplification, as it has excellent frequency response and can be driven by low-voltage and low-power signals.

The TS13005CK B0G is also frequently used in high-gain and high-efficiency circuits, as it has a very large current gain, high collector-emitter voltage, high peak current and high collector-emitter saturation voltage. In addition, it is also used in low-noise amplifier circuits, due to its high-frequency response and low-power consumption. The TS13005CK B0G is an invaluable transistor for many applications and it is used in many fields.

The specific data is subject to PDF, and the above content is for reference

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