TSA1765CW RPG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	560V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 1mA, 10V
Power - Max:	2W
Frequency - Transition:	50MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223

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Introduction The TSA1765CW is a type of single bipolar junction transistor (BJT) used for RF power amplifiers for cellular communication applications. It is a dual gate device, with each gate providing different frequency characteristics. In addition to its RF applications, the TSA1765CW can also be used in R-FID, microwave, and other applications.Working Principle Single bipolar junction transistors (BJT) operate on the principle that two PN junctions are formed between two different materials. When forward biased, the base-emitter and the base-collector junction, creates a current flow between the emitter and collector. The voltage bias of the base is controlled, causing a controlled current flow between emitter and collector and controlled changes in the collector current and collector-emitter voltage. The TSA1765CW is a dual gate, single bipolar junction transistor (BJT) which uses both gates to provide different frequency characteristics, depending on the applied voltage. The two gates have an N-channel (negative voltage) gate and a P-channel (positive voltage) gate. The N-channel gate offers a higher gain than the P-channel gate, thereby providing for RF applications. The TSA1765CW also offers a higher dynamic range which is useful in controlling the amount of power delivered by the device. In addition, its low noise characteristics help to reduce distortion and generate clean signals. Applications The TSA1765CW is a versatile device that can be used in a variety of RF applications such as cellular communication, R-FID, microwave, and other applications. In cellular communication applications, it is used to amplify signals for cell phone towers and antenna systems. In R-FID applications, it is used in reader devices which use electromagnetic fields to read and write data. The TSA1765CW is also used in the fabrication of RFID tags which allow data to be stored on an RFID chip which is embedded in or attached to an object. In microwave applications, the TSA1765CW is used in transceivers, amplifiers, and other circuits. It is also used in antenna systems, such as phased-array antennas, for transmitting and receiving higher-frequency signals. ConclusionThe TSA1765CW is an effective single bipolar junction transistor (BJT) used for RF power amplifiers for cellular communication applications. It is a dual gate device, with each gate providing different frequency characteristics, making it suitable for a variety of applications. It offers high dynamic range, low noise characteristics, and better control over the amount of power delivered, making it an ideal choice for RF applications.

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