TSC4505CX RFG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	300mA
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 10V
Power - Max:	225mW
Frequency - Transition:	20MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23

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The TSC4505CX RFG is a single bipolar junction transistor (BJT) designed for a wide variety of applications. It is a versatile semiconductor device that amplifies, switches, and controls electrical signals in electronics and communications systems. The transistor is composed of three layers of semiconductor material, with a doped p-type layer at the top, an n-type layer in the middle, and a doped n-type layer at the bottom. When an electric current passes through the doped layers, a voltage is generated, which can be used to switch and control electrical signals in the transistor.The TSC4505CX RFG is a low-power, low-cost, low-noise transistor. It has a power rating of one watt and has a cutoff frequency of 450 megahertz. The transistor has low noise features such as low input Noise Figure of 2dB, a high Gain of 14dB, and a low Phase noise of -125dBc/Hz. The RFG also has robust environmental protection features such as reverse bias protection, short circuit protection, and electrostatic discharge protection.The TSC4505CX RFG is most commonly used in radio frequency power amplifiers, suppressors, modulators, switches, oscillators, and detectors. It can also be used in RF-based systems for cellular communications, radio broadcasting, television, and other applications. The transistor can also be used in low power small-signal amplifiers and RF signal processing applications.The transistor operates on the principle of a three-layer structure and is able toswitch rapidly between two different states, allowing it to amplify, control, or modulate signals in electronic systems. The transistor consists of a base, a collector, and an emitter. The base is the gate between the collector and the emitter. When a small current is applied to the base, it controls the flow of a larger current between the emitter and collector. The process of current flow between these two terminals is called “forward-biased”. The transistor is also capable of blocking currentflow when the current is “reverse biased”.The transistor is also capable of switching rapidly between the forward-biased and reverse-biased states. This capability makes it possible for the transistor to control current in a circuit quickly and accurately. The fast switching of the transistor makes it ideal for controlling high-frequency signals in a variety of applications. The TSC4505CX RFG is also capable of producing extremely low noise levels in RF and digital signals, making it suitable for applications that require low-noise signals.The transistor can work in both positive and negative bias configurations and is capable of operating at temperature ranges between -65°C and +150°C. The transistor is also capable of operating in Class A and Class B amplifier configurations, allowing for different levels of performance in different types of circuits.The TSC4505CX RFG offers a range of benefits to electronics designers. It has a wide range of applications, is low cost and low power, has a high gain, is easy to use and is highly reliable. It is ideal for applications such as RF power amplifiers, switches, modulators, modems, and oscillators. It is also suitable for low-power and small-signal amplifiers, as well as RF signal processing. The TSC4505CX RFG is a versatile transistor with a wide range of uses that are sure to suit the needs of many electronics designers.

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