TSFF5210

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1. DESCRIPTION

     TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

2. FEATURES

   1. Package type: leaded

   2. Package form: T-1 3/4

   3. Dimensions (in mm): Ø 5

   4. Leads with stand-off

   5. Peak wavelength: λρ = 870 nm

   6. High reliability 

   7. High radiant power

   8. High radiant intensity

   9. Angle of half intensity: φ = ± 10°

  10. Low forward voltage

  11. Suitable for high pulse current operation

  12. High modulation bandwidth: fc = 24 MHz

  13. Good spectral matching with Si photodetectors

  14. Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

3. APPLICATIONS

    1. Infrared video data transmission between camcorder and TV set

    2. Free air data transmission systems with high modulation frequencies or high data transmission rate requirements

    3. Smoke-automatic fire detectors

4. Package dimensions