TSKS5422X01-FSZ

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Optical Sensors, and phototransistors in particular, are important components in various applications. The TSKS5422X01-FSZ is a remarkable phototransistor that has been designed with particular sensitivity to red and infrared light for its application field. This article will explore the features of this device and their working principle.

The TSKS5422X01-FSZ is an NPN phototransistor. It is sensitive to red and infrared light, but it is important to note that it does not actually generate its own light, as some phototransistors do. This means that it relies on an external light source in order to operate. It is specifically designed for applications where it must sense light on a consistent basis in order to determine its input and output.

The TSKS5422X01-FSZ phototransistor has an operating temperature range of -40°C to 80°C. It has a power dissipation of 1.0W, a collector-emitter voltage (Vce) of 50V, a collector-emitter saturation voltage (Vce(sat)) of 1.5V, and a collector-base voltage (Vcb) of 75V. Its collector-emitter breakdown voltage (BVce) is rated at 120V, and its collector-base breakdown voltage (BVcb) is rated at 160V. In addition, it has a base-emitter voltage (Vbe) of 5V, and a base-emitter saturation voltage (Vbe(sat)) of 1.5V.

The key feature of the TSKS5422X01-FSZ phototransistor is its sensitivity to red and infrared light. Its light sensitivity, measured in the reverse direction, is 1500 lux at a wavelength of 690nm. This means that it is very sensitive and accurate in determining light intensity and can therefore be used in applications where it needs to sense light in order to make decisions. It also has a reverse current leakage of 5μA, which further heightens its accuracy.

The working principle of the TSKS5422X01-FSZ phototransistor is straightforward. When light falls on the device, it can generate a current flow through the device and thus can drive a load connected to the collector terminal. The current flow is limited by the Collector-Emitter voltage (Vce) rating. The amount of current flow depends on the amount of light falling on the device, which allows the TSKS5422X01-FSZ to be used in detection and sensing applications.

The TSKS5422X01-FSZ phototransistor is a remarkable device that has many applications. It is particularly useful for applications that require the detection of red and infrared light and can be used for sensing, controlling, and switching circuits. Its accuracy and sensitivity make it a great choice for a wide variety of applications.

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