Allicdata Part #: | TSP3H150SS1GTR-ND |
Manufacturer Part#: |
TSP3H150S S1G |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 150V 3A TO277A |
More Detail: | Diode Schottky 150V 3A Surface Mount TO-277A (SMPC... |
DataSheet: | TSP3H150S S1G Datasheet/PDF |
Quantity: | 4500 |
1500 +: | $ 0.08264 |
3000 +: | $ 0.07575 |
7500 +: | $ 0.07116 |
10500 +: | $ 0.06657 |
37500 +: | $ 0.06121 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 860mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 100µA @ 150V |
Capacitance @ Vr, F: | 150pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Introduction
TSP3H150S S1G is a single-phase rectifier diode designed by ROHM Semiconductor. It has a breakdown voltage of 1500V and continuous forward current rating of 3A. With its low forward voltage and fast recovery time, the device can be used in many applications where a reliable power source is needed. The design incorporates a unique internal process to reduce power losses associated with the reverse recovery time of the device, providing improved efficiency and temperature stability.
Application Field
TSP3H150S S1G is ideal for use in power supply systems, power transmission and distribution, battery charging systems, and industrial machines. Its low forward voltage and fast recovery time make it suitable for applications where a reliable power source is needed. Its rated breakdown voltage also makes it suitable for use in high-voltage applications such as in solar power systems, medical equipment, and industrial power systems.
Working Principle
The TSP3H150S S1G is made up of two main parts: the anode, which carries the current into the device, and the cathode, which carries the current out of the device. When the anode is positive and the cathode is negative, the device allows current to flow in one direction. When the anode and cathode are in the same polarity, the device blocks the current flow. This “blocking” of current is known as the device’s reverse breakdown voltage.
When current enters the TSP3H150S S1G from the anode, it flows through the device and is converted from AC to DC. The reverse recovery time is the amount of time it takes for the current to be completely transferred from the anode to the cathode. During this time, the device may experience voltage drop and unwanted heat buildup, which can damage the device and decrease its efficiency. To reduce this effect, the design incorporated in the TSP3H150S S1G is designed to minimize the amount of reverse recovery time.
Conclusion
The TSP3H150S S1G from ROHM Semiconductor is a single-phase rectifier diode with a breakdown voltage of 1500V and continuous forward current rating of 3A. It is suitable for use in power supply systems, power transmission and distribution, battery charging systems, and industrial applications due to its low forward voltage and fast recovery time. The design incorporates a unique internal process to reduce power losses associated with the reverse recovery time of the device, providing improved efficiency and temperature stability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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TSP3H150S S1G | Taiwan Semic... | 0.09 $ | 4500 | DIODE SCHOTTKY 150V 3A TO... |
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