Allicdata Part #: | TSS42LRWG-ND |
Manufacturer Part#: |
TSS42L RWG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 30V 200A 1005 |
More Detail: | Diode Schottky 30V 200mA Surface Mount 1005 |
DataSheet: | TSS42L RWG Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.03250 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 650mV @ 50mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 5ns |
Current - Reverse Leakage @ Vr: | 500nA @ 25V |
Capacitance @ Vr, F: | 10pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 1005 (2512 Metric) |
Supplier Device Package: | 1005 |
Operating Temperature - Junction: | -55°C ~ 125°C |
Description
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Introduction
Diodes are popular for use in many different circuits, and single rectifiers are a common type of diode in the electronics industry. The TSS42L RWG is an ultrafast, low-power, rectifier diode which is specifically designed for high-frequency applications. This article will discuss the TSS42L RWG application field and its working principle.Features and Benefits
The TSS42L RWG rectifier diode is a state-of-the-art device. It delivers superior performance with very low power consumption. It offers improved response times and higher current capabilities, meaning faster operation and longer life. In terms of design, the device has a wide range of package sizes and shapes, making it easier to integrate into existing systems.One of the primary benefits of the TSS42L RWG is its ultrafast response time. The device is designed to be highly efficient, meaning that it can switch between a high and low-side state much faster than conventional devices. This makes it ideal for high-frequency applications such as motor control, solid-state relays, and high-power switching.Application Field
TSS42L RWG rectifier diodes are versatile, allowing it to be used in a wide range of applications. This includes motor controls, switch mode power supplies, solar energy systems, vibration sensors, and high-voltage protection. For applications that require high-frequency switching, the device offers superior performance with reduced power consumption. The rectifier diode is also suitable for use in high-temperature applications, making it able to operate in even the hottest conditions.Additionally, the TSS42L RWG is designed for use in a number of automotive applications. This includes automotive inverter electronics, high-efficiency drivers, and illuminated signs. Ultimately, these benefits make the TSS42L RWG an attractive choice for engineers looking to optimize their designs.Working Principle
The TSS42L RWG is an ultrafast rectifier diode which is designed to rapidly switch between a high and low-side state. This is thanks to its low forward voltage drop, which allows for higher switching frequencies. This makes it ideal for high-frequency switching applications, as it can rapidly respond to load changes and offer superior performance.The device uses a PN junction diode structure, meaning that it allows electrons to pass through one way only. When a voltage is applied across the terminals, the electrons move from the anode to the cathode. This effectively blocks current in the opposite direction, preventing the bi-directional flow of current across the device. As a result, the TSS42L RWG can act as a one-way switch that can quickly and accurately change between states.Conclusion
The TSS42L RWG is an ultrafast rectifier diode which is designed to offer superior performance in high-frequency applications. It delivers improved response times and current capabilities, making it an attractive choice for engineers looking to optimize their designs. The device is suitable for a wide range of applications, including motor control, switch mode power supplies, solar energy systems, and automotive applications. Finally, the device uses a PN junction diode structure to enable it to quickly switch between a high and low-side state.The specific data is subject to PDF, and the above content is for reference
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