TSSW3U60 RVG

The rectifier features a planar structure, allowing it to achieve a high junction temperature of 155°C and an operating frequency of 1 MHz with a low forward voltage drop of 800 mV at a current of 2A maximum. This ensures low switching and conduction losses. The diode has a very low reverse recovery charge, allowing for a rising time at a constant current of only 5 ns.

The TSSW3U60 RVG offers an exceptionally high breakdown voltage of 600V and a low forward voltage of 800mV, with an additional temperature coefficient of 0.5mV/°C. The device is available with a RoHS compatible Ni(Pb)-plating, which improves the reliability and repeatability of the rectifying characteristics.

The Schottky diode has several advantages over conventional rectifiers, such as the reduced forward voltage drop and the almost linear semiconductor properties. The low forward voltage drop reduces the power consumption of the circuit and extends the useful life of the device. The second property is more important because it allows the device to operate linearly over a wide range of voltages, resulting in a lower insertion loss.

This device is suitable for use in many different applications, such as high frequency switching in power supplies, telecommunication and data networks, power rectification, voltage regulation and temperature control. It is also used in automotive, medical and consumer electronic equipment.

The TSSW3U60 RVG uses a diodon, an N-type reverse biased diode, as the rectifying element. It operates in the forward bias region of the diode. When the forward bias is applied, the diode will conduct current, allowing the electrons to flow from the anode to the cathode. This process is called rectification; the electrons will flow in the same direction, resulting in higher current and voltage levels.

In addition, the device utilizes a Schottky barrier, allowing faster switching and higher forward current capability than conventional rectifiers. The Schottky barrier is made from a metal-semiconductor junction, where the metal ions (electrons) are attracted to the semiconductor and consequently form a rectifying barrier to the current.

The TSSW3U60 RVG is a highly efficient and reliable single diode Schottky rectifier with a fast reverse recovery time, low power loss and low forward voltage drop. Its wide range of applications and its high temperature capability make it an ideal choice for many switching applications.