TSZL52C11 RWG Allicdata Electronics
Allicdata Part #:

TSZL52C11RWG-ND

Manufacturer Part#:

TSZL52C11 RWG

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 11V 200MW 1005
More Detail: Zener Diode 11V 200mW ±5% Surface Mount 1005
DataSheet: TSZL52C11 RWG datasheetTSZL52C11 RWG Datasheet/PDF
Quantity: 1000
20000 +: $ 0.02969
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005
Description

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TSZL52C11 RWG Application Field and Working Principle

The TSZL52C11 RWG (Reduced Wheatstone-bridge GaAs) diode is a general purpose diode usually used for switching, rectification, and/or protection applications. It is available as a single diode or as part of a multi-diode package. It is composed of two PN junctions contained in a single silicon case to form a DX (heterostructure) structure.

This diode is one of the most popular types of Zener diodes, because it offers an excellent combination of low forward voltage drop, low leakage current and low cost. In comparison to standard, silicon junction diodes, this device operates at significantly higher frequencies and output powers.

The TSZL52C11 RWG has two main characteristics that make it suitable for use in a variety of applications. The first is its low forward voltage drop. This diode conducts current in one direction, thus eliminating the need for a more complicated rectifying circuit. Plus, its low forward voltage drop makes it an excellent choice for applications that require a low noise level.

The second factor that makes the TSZL52C11 RWG an ideal choice is its high reverse breakdown voltage. This property allows it to be used in applications requiring a high precision voltage. This high precision voltage controls the current in the device and thus, can be used to control the on/off switching of the device.

The working principle of TSZL52C11 RWG is based on the DX (heterostructure) structure. The two PN junctions contained in the device provide a diode gate, which is what allows the current to flow in one direction. In the absence of a reverse biasing potential, the device behaves like a standard rectifying diode and will prevent current from flowing in the reverse direction. However, when the device is reverse biased, the electric field in the device is increased, resulting in a breakdown or Zener breakdown mechanism.

As its name suggests, the TSZL52C11 RWG diode is used in a variety of applications, such as switching, rectification, and/or protection. It is especially suited for applications requiring fast switching, high current and high voltage capabilities. This device is also suitable for use in motor control, automotive, consumer electronics and various other industries.

The specific data is subject to PDF, and the above content is for reference

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