Allicdata Part #: | TTA0002(Q)-ND |
Manufacturer Part#: |
TTA0002(Q) |
Price: | $ 2.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 160V 18A TO-3PL |
More Detail: | Bipolar (BJT) Transistor PNP 160V 18A 30MHz 180W T... |
DataSheet: | TTA0002(Q) Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 1.86165 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 18A |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 900mA, 9A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 1A, 5V |
Power - Max: | 180W |
Frequency - Transition: | 30MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3PL |
Supplier Device Package: | TO-3P(L) |
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The TTA0002(Q) transistor is a single bipolar junction (BJT) type. Its primary purpose is to amplify and switch electronic signals. This means that it can assist with switching high-power circuits as well as amplify small signals. It has an excellent reputation for reliability, low noise, and high-speed performance.
The semiconductor that forms the base for the TTA0002(Q) is a gallium arsenide (GaAs) substrate material. This material is ideal for this type of biasing due to its high-performance properties and flexibility in manufacturing processes. The substrate material consists of an array of GaAs epitaxial layers – an outer layer of substrate material, followed by an inner layer of N-type (N-well) material, then an electrical connection of a source, gate and drain. The substrate is placed over a substrate grid, usually made of silicon, with each grid element connected to the others to form a single circuit.
The TTA0002(Q) transistor has a collector-emitter voltage of -3 volts and a turn-on voltage of 0.4 volts. With its total Hfe ratings of around 1000, it provides a high performance solution for applications from industrial and complex control to consumer electronics such as amplifiers and switching circuits. It is also suitable for high-power switch circuits due to its low turn-on voltage.
The working principle of the TTA0002(Q) is relatively straightforward. The collector receives a positive input voltage which causes the current to flow through the emitter junction to the base. This causes the BJT to then turn on, allowing the base current to flow through the transistor. This current then continues on to flow through the collector-emitter junction, ultimately providing the output voltage.
The TTA0002(Q) transistor is being used in a wide variety of applications. Its high performance and relatively low power consumption make it well-suited for use in industrial applications such as motor controls, switches and other control circuits. It is also ideal for consumer electronics applications ranging from RF amplifiers to audio input stages. It is also being used in computer applications for interfacing with memory, I/O modules, CPU chips and other peripheral circuits.
As the TTA0002(Q) transistor continues to be applied in more and more applications, it is important to understand its working principles and the application areas in which it is proving to be effective. The device has proven to be reliable and efficient in a number of different applications and should continue to be a popular choice for many years to come.
The specific data is subject to PDF, and the above content is for reference
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