Allicdata Part #: | TTA1943(Q)-ND |
Manufacturer Part#: |
TTA1943(Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 230V 15A TO-3PL |
More Detail: | Bipolar (BJT) Transistor PNP 230V 15A 30MHz 150W T... |
DataSheet: | TTA1943(Q) Datasheet/PDF |
Quantity: | 80 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 230V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 800mA, 8A |
Current - Collector Cutoff (Max): | 5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 1A, 5V |
Power - Max: | 150W |
Frequency - Transition: | 30MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3PL |
Supplier Device Package: | TO-3P(L) |
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The TTA1943 transistor is a single bipolar junction transistor (BJT) designed for high-frequency applications. It can operate at frequencies well above 1 MHz and is capable of handling power levels up to 0.8W at 8 GHz. It is often used in RF IF amplifiers and radio frequency (RF) power amplifiers. As a small plastic encapsulated package, it is ideal for applications where size and thermal capacity are important considerations.
Basic Working Principle
A BJT consists of three semiconductor layers, with an emitter, base and collector. When current is applied in the base, it carries the electrons from the emitter to the collector. This process is called the forward bias, and this generated electron movement is what amplifies the applied signal. The current gain of the device is proportionate to the amount of current injected into its base. The gain also depends on the voltage applied across the transistor\'s base and emitter junction.
Device Characteristics
The TTA1943 features high current gain and high frequency performance, making it well-suited for RF and IF applications. As a high-frequency BJT, the device has a maximum frequency of 8 GHz and can be used in applications up to 0.8 watts. It also has an AC current gain of 20dB or greater and features a maximum collector current of 80mA.
Advantages and Disadvantages
The TTA1943 has several advantages that make it well-suited for RF and IF applications, including high-frequency performance, high current gain, and small package size. It also has a relatively low cost compared to similar devices, making it an attractive option for those working on a budget. The primary disadvantage of the device is that its current gain decreases as the frequency increases, which can limit its performance in some applications.
Conclusion
Overall, the TTA1943 is an excellent single bipolar junction transistor designed for high-frequency applications. It features high-frequency performance, high current gain, and a small package size, making it well-suited for RF and IF applications. Although it may have a few drawbacks, these are easily overshadowed by its overall excellent performance and low cost.
The specific data is subject to PDF, and the above content is for reference
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