TTC5200(Q)

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	15A
Voltage - Collector Emitter Breakdown (Max):	230V
Vce Saturation (Max) @ Ib, Ic:	3V @ 800mA, 8A
Current - Collector Cutoff (Max):	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 1A, 5V
Power - Max:	150W
Frequency - Transition:	30MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3PL
Supplier Device Package:	TO-3P(L)

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Transistors - Bipolar (BJT) - Single: TTC5200(Q) Application Field and Working Principle

The TTC5200 series of transistors, also known as the BC5200Q series, is a family of silicon NPN transistors produced by Toshiba Corporation in Japan. The devices are used in many consumer and industrial applications including audio amplifiers, switching circuits, and voltage regulators. The TTC5200 transistor is designed for high performance and reliable operation in a variety of applications. In this article, we will discuss the application field and working principle of the TTC5200(Q) transistor.The TTC5200(Q) is a silicon NPN transistor that enables efficient circuit design and generates maximum power available from the transistor. It is designed with a low voltage, low power drain and high output capability, making it ideal for many circuit applications. It has a high gain value of 80 - 130 and a collector-emitter breakdown voltage of 5V. The device has an operating temperature range of 0°C to 85°C and is able to withstand high humidity and harsh environment conditions.The TTC5200(Q) transistor is typically used in audio amplifier circuits due to its high gain and low voltage characteristics. It can be used to build a simple single stage amplifier circuit, as well as a multistage amplifier circuit. It can also be used in switching circuits, as it can provide a high amount of current when triggered. Additionally, the transistor can be used in voltage regulators to regulate the output voltage of a power source.The working principle of the TTC5200(Q) is based on the biasing of the base-emitter junction of the transistor with the help of the biasing voltage applied to the base terminal. When a current is applied to the base terminal of the transistor, majority carriers of the base region will flow into the base region from the emitter. This current base current will cause other majority carriers to be diverted to the collector, which allows the flow of current and the transistor to be turned “ON”. As the base current increases, the collector current also increases, allowing the transistor to remain turned on and provide amplification and switching current.The TTC5200(Q) is a robust and reliable transistor that is suitable for many types of circuit applications. It is designed for use in audio amplifiers, high current switch circuits, and voltage regulators. It is a silicon NPN transistor with a low power drain and high output capability, making it an ideal choice for many circuit designs. Additionally, the device has a high gain value and is able to withstand high humidity and harsh environment conditions, making it a reliable and cost-effective choice for many applications.

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