TV02W111-G Allicdata Electronics
Allicdata Part #:

TV02W111-G-ND

Manufacturer Part#:

TV02W111-G

Price: $ 0.07
Product Category:

Circuit Protection

Manufacturer: Comchip Technology
Short Description: TVS DIODE 110V 177V SOD123
More Detail: N/A
DataSheet: TV02W111-G datasheetTV02W111-G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.06549
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Voltage - Clamping (Max) @ Ipp: 177V
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 200W
Current - Peak Pulse (10/1000µs): 1.13A
Series: --
Voltage - Breakdown (Min): 122V
Voltage - Reverse Standoff (Typ): 110V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (transient voltage suppressor) applications have become increasingly popular in recent years, due to their ability to limit or suppress the voltage that rises above normal levels, and the wide variety of types and sizes available. One of the most common types of TVS is the TV02W111-G, a bidirectional flat lead diode that provides improved clamping over traditional TVS Diodes. This article will explore the application field and working principle of the TV02W111-G.

The TV02W111-G is ideally suited for use in applications that require high input PEAK clamp voltage of up to 45 volts, and low leakage current of just 0.9mA @ 25 degrees Celsius. The device can be used to protect sensitive electronic circuits from transients caused by lightning strikes, ESD (electrostatic discharge), and other forms of electrical overstress. This device is commonly used in industries such as automotive, medical, industrial, and consumer electronics, as well as other sensitive applications.

The TV02W111-G consists of two identical sub-devices named A and B. Each sub-device is composed of an optimized PN junction which is surrounded by a silicon substrate. The intrinsic doping profile and special passivation layer provide a capacitance lower than 1pF for each sub-device. The bidirectional TVS diode has fast response times and a low clamping voltage, which makes it an ideal choice for applications with challenging conditions or high-speed data rates.

The TV02W111-G performance is improved by its response time and high surge current-handling capability. The device has a relatively low clamping voltage rating of 45V ±15%, as well as a peak pulse current rating of 10A, making the TV02W111-G suitable for high surge current applications. This device also has an optimized reverse leakage current rating of 0.9mA at 25 degrees Celsius.

The TV02W111-G can be used as an overcurrent and overvoltage protection device. It can be connected in a series with the protected circuit to provide a voltage and current limit to the circuit. In the event of an overcurrent or overvoltage event, the TV02W111-G will activate and absorb the energy by diverting the current away from the circuit and limiting the voltage to a safe level.

The TV02W111-G is a versatile device that can be used in a variety of applications, including automotive, consumer electronics, and industrial. It has a fast response time, a low clamping voltage, and a high surge current-handling capability, making it an ideal choice for overvoltage and overcurrent protection.

The specific data is subject to PDF, and the above content is for reference

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