TV30C120JB-G Circuit Protection

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TV30C120JB-G are TVS - diodes that are commonly used to protect sensitive electronic components from harmful electrostatic discharges and voltage transients. They are manufactured in a planar technology with a "trench MOS" construction and are designed to provide the greatest possible protection against ESD, EFT, and lightning surge events. These TVS diodes are effective at absorbing large voltage transients and do not create additional circuits or pathways during an ESD event risk

The TV30C120JB-G has an ESD protection capacity of ±30kV Human body model (HBM). This rating is comparable to other well-known TVS diodes, like the SMF5.0 product. The TV30C120JB-G also offers a low leakage current of 0.5μA and a fast response time of less than 1NS. This makes the TV30C120JB-G ideal for protecting sensitive components and circuits from damage and disruption during lightning events or other sources of high-energy surges.

A benefit of using the TV30C120JB-G is its dual mode of protection. This TVS diode uses an avalanche breakdown mechanism for ESD protection, but also offers a low-capacitance transient suppression mechanism as well, which allows for better protection from fast rising voltage transients. This makes the TV30C120JB-G a versatile device, capable of both ESD and transient protection.

The TV30C120JB-G can be used in a variety of applications, such as in the automotive industry, telecom, consumer electronics, PC’s, and as part of various control boards. It can also be used as a generic protection for I/O lines of electronic systems or communication links between two pieces of equipment. This device is also ideal for portable electronics, due to its low leakage current, which helps to minimize power consumption.

The TV30C120JB-G offers a wide range of working voltages from 5.0V to 75V. This device has a maximum operating temperature range of -40℃ to +85℃, making it suitable for a variety of applications and operating environments. The TV30C120JB-G also offers a short-circuit protection feature, that provides protection against excessive current.

The TV30C120JB-G uses an integrated circuit protection scheme that involves the combination of a zener diode, NPN transistor, and resistor. When an ESD event occurs, the zener diode provides protection by clamping the voltage between the anode and cathode. The NPN transistor then provides an overload protection, by limiting the current and preventing damage to the device. The resistor provides dampening, by limiting the current which contributes to a fast response time.

The TV30C120JB-G is a versatile TVS diode which can be used in a variety of applications requiring ESD and transient protection. It is a reliable, cost-effective device with a wide operating voltage and temperature range as well as a fast response time. This makes the TV30C120JB-G an ideal solution for protecting against voltage transients, lightning surges, and ESD events.

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