TV50C171J-G Allicdata Electronics

TV50C171J-G Circuit Protection

Allicdata Part #:

TV50C171J-G-ND

Manufacturer Part#:

TV50C171J-G

Price: $ 0.56
Product Category:

Circuit Protection

Manufacturer: Comchip Technology
Short Description: TVS DIODE 170V 275V DO214AB
More Detail: N/A
DataSheet: TV50C171J-G datasheetTV50C171J-G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.51081
Stock 1000Can Ship Immediately
$ 0.56
Specifications
Voltage - Clamping (Max) @ Ipp: 275V
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 18.36A
Series: --
Voltage - Breakdown (Min): 189V
Voltage - Reverse Standoff (Typ): 170V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes are a type of semiconductor device that is typically used to provide over-voltage protection for electronic applications.The TVS - Diode, also referred to as Transient Voltage Suppressor Diode, is designed to protect against ESD (electrostatic discharge), hv (hyper-voltage) and electrical overstress (EOS) events. The TV-DIODE is usually comprised of a diode, Zener diode, and stabilized Zener diode configuration.

TV50C171J-G Application Field And Working Principle

The TV50C171J-G is a dual-channel common-mode transient voltage suppressor (TVS). As a dual-channel device, the TV50C171J-G is capable of protecting two lines or devices against electrostatic discharge (ESD) and other destructive effects of transient voltage events. The two silicon diode channel junctions of the TVS are designed to clamp high-frequency electrical transients below the maximum ratings for the application.

The TV50C171J-G provides protection against electrostatic discharge (ESD), which is characterized by small currents and short duration high-voltage pulses. The device is rated for ± 33 Volt at a clamping voltage of 48.3 Volt, per the IEC 61000-4-2 standard. It can also provide protection against an over-voltage event up to ± 40 Volt. The device is a high surge capability with a breakdown voltage of 55.6 Volt. The TVS is designed to withstand an 8/20 μs pulse of +/ 22 A, and 5 kA under repetitive pulse conditions, providing protection from transient voltage stress.

The TVS device is specified for operation at temperatures from -55°C to +130°C. It meets the requirements of a wide variety of industrial and consumer applications, ranging from portable electronics to industrial systems. The TVS is an ideal solution for applications that require efficient ESD and transient protection in a small form factor.

The TV50C171J-G’s unique dual-channel common-mode design allows for maximum protection of two lines or devices in a small surface-mount footprint. The TVS is constructed of two silicon diodes configured in parallel with a common cathode and two anti-parallel Zener diode structures connected between the common cathode and the anode. The two Zener structures are stabilized with wrap-around capacitors to reduce the clamping voltage. When a voltage transient exceeds the threshold voltage, the device diverts the current to ground, providing ESD protection.

The TV50C171J-G also features an internal low clamping voltage regulator circuit which keeps the clamping voltage to an acceptable level. This ensures that the device will not fail due to excessive clamping voltages. Additionally, the TVS is designed to endure high energy ESD transients in excess of the human body model of 15KV.

In conclusion, the TV50C171J-G is a reliable dual-channel TVS for a wide range of application areas. The device provides high over-voltage protection, while preventing failure due to ESD and other destructive electrical transients. The TVS is an ideal solution for applications that require efficient ESD and transient protection in a small form factor.

The specific data is subject to PDF, and the above content is for reference

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