TV50C130J-G Circuit Protection

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TVS – Diodes are based on the principle of electrostatic discharge (ESD) and are used in electrical circuits that are vulnerable to surges or static electricity. The TVS – Diode, TV50C130J-G is a highly robust and reliable diode commonly used in the protection of electrical circuits against overvoltage and ESD attacks.

The TV50C130J-G is an important component of circuit protection devices and has been widely used in automotive, industrial, solar, medical, communications and consumer electronics applications. The device performs two very important functions. Firstly, it is an active device which provides protection from transient overvoltage. Secondly, it provides overcurrent protection in the event of an overload or short circuit.

The TV50C130J-G is designed to be used in an array of applications including computer card edge protection, laptop I/O ports, printers and other high-speed data lines, solar photovoltaic cell systems, and active EMI filter networks for automotive applications. It is also suitable for power supply circuits providing surge suppression for motor and servos. The diode\'s robust design allows it to withstand voltages up to 50 VDC and 130 Amp peak pulse currents, making it suitable for a range of applications.

The main features of the TV50C130J-G are the low leakage current, 1 mA typical, and the ultra-low dynamic clamp voltage, 23 V max. These features mean that the TVS – Diode can provide a very high level of protection from overvoltage, ESD and surge currents, as well as reducing the amount of power dissipated.

The TV50C130J-G has a very low insertion loss, making it ideal for applications that require reliable data transmission. Furthermore, the diode has a wide operating temperature range from -55°C to +85°C, making it suitable for a range of environments. The TV50C130J-G also offers a high level of EMI filtering, allowing for reliable and stable data transmission in noisy environments.

In terms of working principles, the TV50C130J-G contains a sensitive gate element which rapidly responds to transient overvoltage and overcurrent conditions. When a transient voltage or current is applied to the gate, it triggers a cascade of electrons across two P-type layers in the diode, creating a voltage clamp. This voltage clamp reduces the voltage across the protected circuit instantly, thereby providing protection from overvoltage. The gate element is also tolerant to ESD, allowing for the diode to respond to fast transient spikes that can damage electrical circuits significantly.

The TV50C130J-G is a robust and reliable diode that is used for the protection of electrical circuits against overvoltage surges and ESD attacks. It is designed to be used in a wide range of applications, including computer card edge protection, laptop I/O ports, printers and other high-speed data lines, solar photovoltaic cell systems, and active EMI filter networks for automotive applications. The diode has low leakage current and a low dynamic clamp voltage, ensuring a high level of protection and a reliable data transmission. The device also has a wide operating temperature range and is highly tolerant to ESD making it suitable for a range of applications.

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