TZM5223B-GS18

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	2.7V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	30 Ohms
Current - Reverse Leakage @ Vr:	75µA @ 1V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:	SOD-80 MiniMELF

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Overview

TZM5223B-GS18 is a type of single Zener diodes which have been designed to offer higher levels of ESD protection. The diodes have a wide range of applications and its working principle is based on the reverse conduction direction of the diode.

Application Field

TZM5223B-GS18 is specifically designed to protect the sensitive parts of circuits such as circuits integrated with a microcontroller, signal processor, memory and other electrostatic discharge sensitive ESD devices. The TZM5223B-GS18 diodes have been optimized for the use in communication ICs and other ICs required for high speed signal transmission system. The applications of TZM5223B-GS18 include ESD protection of numerous telecom and LAN products such as USB hubs, Ethernet hubs, GSM and CDMA mobile phone base station hosts, etc. In addition to the protection for communication products, TZM5223B-GS18 are also used for providing ESD protection for the Zigbee radios, wireless LANs and RFID systems. TZM5223B-GS18 offers significant advantages over the traditional Zener diodes such as improved surge capability, electrical isolation characteristics and simplified board designs. With the improved performance of TZM5223B-GS18, it provides a greater degree of ESD protection and helps to protect the connected devices from being damaged or destroyed due to electric surge, over-voltage or electromagnetic interference.

Working Principle

The working principle of TZM5223B-GS18 is based on the reverse conduction direction of a diode, where the current flows in the reverse direction and the diode acts like a switch. When the voltage across the diode is above the breakdown voltage, the diode starts to conduct and is soon saturated. The breakdown voltage of TZM5223B-GS18 is precisely designed for the ESD protection. With a breakdown voltage as low as 6V, the breakdown voltage of the TZM5223B-GS18 is lower than the typical voltage needed for the ESD protection. This allows the TZM5223B-GS18 to conduct current and absorb the energy from the ESD and provide protection to the connected device.Furthermore, another important feature of TZM5223B-GS18 is its low clamping voltage and low leakage current. This helps to reduce the power loss that can be seen in the connected device when energized by the ESD pulse. The low clamping voltage also helps in ensuring that the device under protection is not damaged due to the ESD pulse. The excellent electrical characteristics of TZM5223B-GS18, such as its high surge capability, electrical isolation and excellent breakdown voltage, along with its low leakage current and clamping voltage make it an ideal device for providing ESD protection for numerous communication products.

Conclusion

TZM5223B-GS18 is a type of single Zener diodes which have been designed to provide a high level of ESD protection for communication products. The excellent electrical characteristics of the diodes, such as its high surge capability, excellent breakdown voltage and low clamping voltage make it an ideal device for providing ESD protection.

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