Allicdata Part #: | TZM5239B-GS08TR-ND |
Manufacturer Part#: |
TZM5239B-GS08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 9.1V 500MW SOD80 |
More Detail: | Zener Diode 9.1V 500mW ±5% Surface Mount SOD-80 Mi... |
DataSheet: | TZM5239B-GS08 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 9.1V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 7V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 MiniMELF |
Base Part Number: | TZM5239 |
Description
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TZM5239B-GS08 is a single Zener diode designed for power supply regulation, voltage clipping, voltage clamping, and overvoltage protection in appliations such as telecommunications, automotive, and industrial equipment. It offers stable low-leakage current and low-temperature coefficients of barrier voltage, which helps to maintain a consistent voltage level when handling high-speed fluctuations.The working principle of this diode lies in its semiconductor diode core, which is specially designed to limit the current flow through the device. When the voltage across the diode reaches the Zener breakdown level, a reverse current, known as the Zener current, begins to flow. This current is proportional to the difference between the applied voltage and the Zener breakdown voltage, and the Zener diode attempts to maintain a steady voltage, regardless of supply fluctuations.The TZM5239B-GS08 is capable of withstanding high currents, up to 4A, and high voltages up to 200V, making it suitable for regulating power supply in a variety of high-power applications. It has a wide range of forward and reverse voltage , and features built-in protection layers for superior isolation and greater reliability. The maximum rated power dissipation of the device is 800mW.The best feature of this diode is its low-leakage current, as it only 0.5μA max at 25℃, meaning it is ideal for high-current, high-voltage applications. Its unique structure also contributes to its low temperature coefficient of barrier voltage (VBR), which is only 0.08%/ C. This helps maintain the stable voltage level even with the current fluctuations occurring at high speeds.The TZM5239B-GS08 can be used in a wide range of applications, such as telecommunications, automotive, and industrial equipment. It is suitable for controlling power supply in power supplies, UPS, and other circuits and can also be used for overvoltage protection. It has a variety of features and functions that make it an excellent choice for powering up different kinds of equipment.Overall, the TZM5239B-GS08 is a reliable and robust diode that can be used for a variety of power-related applications. It offers excellent thermal stability and low-leakage current and low-temperature coefficients of barrier voltage, which help maintain the consistent voltage level even with the current fluctuations occurring at high speeds. Thanks to its robust construction and wide operating range, it is suitable for protecting a variety of circuits and equipment from overvoltage damage.The specific data is subject to PDF, and the above content is for reference
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