TZM5225F-GS18 Allicdata Electronics
Allicdata Part #:

TZM5225F-GS18-ND

Manufacturer Part#:

TZM5225F-GS18

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER SOD80
More Detail: Zener Diode 3V 500mW Surface Mount SOD-80
DataSheet: TZM5225F-GS18 datasheetTZM5225F-GS18 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 3V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 1600 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Description

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The TZM5225F-GS18 is a single zener diode belonging to the semiconductor family. It is often used in various electronic circuits and is mainly used for voltage regulation and voltage containment during peak transitioning moments.

The TZM5225F-GS18 has a reversed breakdown voltage of 18V with a power dissipation of 250mW and an operational junction temperature range from -65°C to 150°C. Its construction is designed to allow for a fast voltage clamping response performance. The maximum permissible average junction temperature at which the zener diode can safely operate without problems increases with decreasing power dissipation.

In operation, the TZM5225F-GS18 behaves like a PN junction diode, though this is backward biased. In states of backward bias, the diode is essentially non-conducting and behaves like an open switch. However, as forward current continues to increase and exceeds certain threshold, the diode will fall into a region where the reverse current can dramatically increase with the slightest change in voltage.

Due to the constructed assembly of the TZM5225F-GS18, it is well-suited for numerous applications for transient suppression in consumer electronics and automotive circuits. Such applications include protection circuits and voltage regulation, as well as other low power circuits. It is especially useful in high frequency circuits and where an ultra short response time is required.

The working principle of this diode is based on the phenomenon of avalanche breakdown. When the diode is connected in a circuit with the anode connected to a more positive voltage, a reverse biased provides an electric field strong enough to accelerated the electrons. When these electrons gain enough energy, they become capable of knocking electrons off their atoms, resulting in the formation of electron-hole pairs. Since their origin is none other than the applied voltage, the current increases exponentially, adding to the current flowing through it.

These additional carriers, together with the increase in voltage cause a marked increase in voltage across the diode with a subsequent drop in resistance. This helps to limit the voltage to a certain peak level and provide a fast response within the desired bandwidth. As a result, these zener diodes are widely used for protecting against over-voltage or transients events in a variety of circuit.

The specific data is subject to PDF, and the above content is for reference

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