TZM5234B-GS08 Allicdata Electronics

TZM5234B-GS08 Discrete Semiconductor Products

Allicdata Part #:

TZM5234B-GS08TR-ND

Manufacturer Part#:

TZM5234B-GS08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 6.2V 500MW SOD80
More Detail: Zener Diode 6.2V 500mW ±5% Surface Mount SOD-80 Mi...
DataSheet: TZM5234B-GS08 datasheetTZM5234B-GS08 Datasheet/PDF
Quantity: 25000
Stock 25000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Base Part Number: TZM5234
Description

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TZM5234B-GS08 is a single zener diode device used in various applications. It has a wide range of voltage ratings and current specifications. This makes it suitable for various electronic and electrical applications. The device can be used to help regulate and prevent voltage over-shoot or under-shoot in various types of electronic systems. It can provide reliable protection to the system by limiting the voltage or current within a desired range.

The TZM5234B-GS08 provides a rated breakdown voltage of 5.0V with a breakdown voltage range specification of 4.5 - 5.5V. It also provides a maximum reverse voltage rating of 5.5V. The device also has a maximum forward voltage rating of 5.0V. The total power dissipation rating of the device is 100 mW and it is typically used with a power dissipation rate of 400 mW. Its maximum junction temperature rating is 150°C. The device has a power derating of 8 mW/°C for operation temperatures above 25°C. The device is suited for both commercial and industrial applications.

The TZM5234B-GS08 operates on the principle of zener breakdown effect. The breakdown effect is achieved when a diode is forward biased at a certain voltage. When the zener diode reaches the zener voltage value of the particular type of diode, a high electric field is created in the junction region, which weakens the covalent bonds in the dielectric region and allows carriers to transport across it. This causes the zener diode to breakdown and it becomes reverse biased. A zener diode can also be used in reverse bias mode to control the circuit’s impedance.

The TZM5234B-GS08 can be used as an over-voltage protection, as well as an isolation barrier device. It is often used in conjunction with a positive voltage regulator to limit the voltage across certain components in the circuit. It is also used in low-power switching and voltage regulation applications, where low voltage and short circuit protection is required. The device is also used in surge protection circuits, where it acts as a shunt to dissipate large current pulses.

The TZM5234B-GS08 is suitable for use in a broad range of applications. It is particularly popular in electronic and computer products, as well as in industrial control systems. The device is also used in automotive applications, such as in anti-lock brake systems, air bag systems, and sensor circuits. It can also be used in medical and telecom products, solar cell and power management systems, and in consumer electronics.

In summary, the TZM5234B-GS08 is a popular single zener diode device. It is used in a wide variety of applications and provides reliable protection against overvoltage and undervoltage conditions. The device is also suitable for use in low-power switching, surge protection, and voltage regulation applications. The device is perfect for commercial, industrial, automotive, medical, and telecommunications applications.

The specific data is subject to PDF, and the above content is for reference

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