TZM5236C-GS08 Allicdata Electronics
Allicdata Part #:

TZM5236C-GS08-ND

Manufacturer Part#:

TZM5236C-GS08

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 7.5V 500MW SOD80
More Detail: Zener Diode 7.5V 500mW ±2% Surface Mount SOD-80
DataSheet: TZM5236C-GS08 datasheetTZM5236C-GS08 Datasheet/PDF
Quantity: 1000
12500 +: $ 0.02249
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 6 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 6V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Description

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Diodes, such as Zener diodes, are integral components in many industrial and consumer applications. The TZM5236C-GS08 Zener diode, in particular, is a high performance and reliable diode for a range of power conversion applications. This diode is designed to feature a wide operating temperature range between -55°C and +125°C and an avalanche capability designed to support continuous forward power dissipation of up to 2.5W. What makes this diode suitable for a variety of applications is its capability to handle high surge currents of up to 3A. In addition, it features a 1kV reverse breakdown voltage that helps to protect other circuit components from high voltage spikes.

The TZM5236C-GS08 diode can be used in a range of applications to achieve optimal performance, power conversion, and dependability. The diode is suitable for use in power supplies, voltage regulation, and in high-voltage rectification circuits for various medical and industrial applications. Furthermore, the diode has a fast response time that helps it to handle rapid voltage changes, making it ideal for use in power converters and voltage regulators.

The working principle of the TZM5236C-GS08 diode entails a n-type and p-type material, typically silicon, that is connected together to form a junction. This junction captures electrical charges from the external power source such as a device or an AC power supply. When the voltage exceeds its breakdown voltage, the electrical current travels through the p-n junction. This flow of current through the diode generates heat, it is then dissipated outside of the device or circuit board. It also can be used as a safeguard against high voltage spikes in the circuit, allowing only a certain amount of current to pass through.

The TZM5236C-GS08 Zener diode is designed to provide dependable performance and versatility in a range of power conversion and voltage regulating applications. Its high reverse breakdown voltage, fast response time, and surge current capability make it ideal for use as a safeguard against high voltage spikes and in power converters and regulators. Its wide temperature range and low power dissipation capability make it an ideal choice for medical and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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