TZM5242B-GS18 Allicdata Electronics
Allicdata Part #:

TZM5242B-GS18-ND

Manufacturer Part#:

TZM5242B-GS18

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 12V 500MW SOD80
More Detail: Zener Diode 12V 500mW ±5% Surface Mount SOD-80 Min...
DataSheet: TZM5242B-GS18 datasheetTZM5242B-GS18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01852
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Description

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Diodes - Zener - Single are general purpose semiconductor devices that comprise of an anode and a cathode, and a semiconductor that acts as a junction between them. The TZM5242B-GS18 device is one such diode that is primarily used in different electronic applications. This article will explore the application field and working principles of this semi-conductor device in detail.

The TZM5242B-GS18 is a Zener diode in a small package, with a unique face-down chip orientation. It is used for a variety of applications such as voltage regulation, power supply protection and voltage detection. This diode is also used in switching power supplies and for ESD protection in portable electronics.

The core of the TZM5242B-GS18 is a Zener PN junction. In operation, the reverse bias on the diode causes the valence band electrons to jump across the junction. This action generates an electron-hole pair, which are then swept by the electric field. The reverse bias also creates a depletion region at the junction, where the electrons and holes are prevented from reaching each other.

The operating principle of the TZM5242B-GS18 is based on the Zener Breakdown principle. At a certain reverse bias level, the electric field across the junction becomes large enough to cause the valence band electrons to jump across the junction. This current is then limited by the series resistor, and the voltage across the diode is determined by the current and the impedance of the resistor. The breakdown voltage of the diode depends on the doping level, which determines the magnitude of the electric field, and the temperature.

The TZM5242B-GS18 is especially well suited for applications which require high surge current capability and low dynamic impedance. This makes it ideal for use in voltage regulation, power supply protection and voltage detection applications. The diode is also used for ESD protection in portable electronics, to protect the electronics from high voltage spikes and surges.

The TZM5242B-GS18 is a reliable and versatile device, which can be used for a wide range of applications. It is available in a variety of packages, and can be used in a broad range of electrical systems. The diode is also relatively inexpensive, making it a popular choice for many applications. It is important to note that this diode should only be used with a series resistor, as it is not designed to be used without one.

In summary, the TZM5242B-GS18 is a Zener diode that is suitable for use in voltage regulation, power supply protection and voltage detection applications. It is based on the Zener Breakdown principle, which allows it to operate reliably and efficiently. It is available in a variety of packages, and can be used in many electrical systems. It is an economical choice for many applications, and should be used with a series resistor.

The specific data is subject to PDF, and the above content is for reference

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