TZM5245F-GS18

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The TZM5245F-GS18 is a single Zener diode used in a variety of applications. It is housed in a miniature zinc oxide package and provides low power losses in the reverse bias. The diode features a breakdown voltage of 18.0 volts and a peak power dissipation of 0.5 watts. It is used for devices connected to a power grid, for general purpose protection circuits, and for clamps used in audio/visual systems.

The working principle of the TZM5245F-GS18 is based on the Zener effect. It is a type of leakage current in the reverse bias that occurs when the applied electric field reaches a certain value. In the case of TZM5245F-GS18, the exact breakdown voltage of 18.0V is maintained by a combination of avalanche breakdown and Zener breakdown. The avalanche breakdown occurs in the pn-junction over the 0.18µm width of the junction and is responsible for clamping of the voltage. The Zener breakdown is a more localized phenomenon, occurring at a single point within the pn-junction and thus providing more stability to the breakdown voltage.

The combination of avalanche and Zener breakdown enables the design of reliable and low power losses protection circuits. The diode can be used in power adapter circuits, audio/video clamps and any other application where a stable and protected reverse bias is required. Its miniature zinc oxide package ensures low power dissipation and high input impedance, which is why it is used in a multitude of applications.

The TZM5245F-GS18 is a reliable and efficient Zener diode that can be used in a variety of applications. It is housed in a small zinc oxide package, it provides low power losses, and it enables the design of reliable low power protection circuits. It can be used in power grid devices, clamps for audio/visual systems, and in general purpose protection circuits. It is an ideal choice for applications where a safe and reliable reverse bias needs to be provided.

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