TZM5246B-GS08

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The TZM5246B-GS08 device is a Zener diode designed for application in a wide range of general purpose circuit design and power management applications, including voltage switch applications. The device is available in the SOT-23 package and is designed for use with a variety of power management ICs. The TZM5246B-GS08, which is a single Zener diode, is an excellent choice for applications that require low capacitance of the diode, such as voltage switch applications.

The basic construction and working principle of a Zener diode is similar to that of a conventional diode in which electrons flow through a silicon or germanium or gallium arsenide PN-junction. It is the actual nature of the PN-junction structure and the doping of the material which decides whether the diode will act as an ideal diode or a Zener diode. When the Zener diode is forward biased, the holes and electrons in the PN-junction recombine near the junction and the junction acts like an ideal diode. When the voltage applied to the Zener diode exceeds the specified breakdown voltage, the device operates in reverse breakdown and the PN junction acts like avoltage-dependent resistor. In order to provide reliable operation of the Zener diode in this mode, the diode is designed to limit the current that flows through the device when in the reverse-breakdown region. This helps to protect the device from thermal damage and ensure that the device operates in its specified region.

The TZM5246B-GS08 is a single Zener diode with a breakdown voltage of 5.2Volts and a power dissipation rating of 500mW. The device has a low DC leakage current of 10μA and low capacitance of 1pF. The TZM5246B-GS08 is suitable for a variety of general purpose circuit designs, including voltage switch applications.

One example of an application for the TZM5246B-GS08 is for use in a voltage switch circuit. The TZM5246B-GS08 can be used in combination with a voltage regulator to convert the voltage from one range to another. The Zener diode limits the current that can flow through the device when in the reverse breakdown region, ensuring that the device will not be damaged. When the set voltage from the voltage regulator is reached, the Zener diode will begin to limit the current, and the voltage will switch to the new voltage range.

The TZM5246B-GS08 is a single Zener diode which can be used in a wide range of general purpose circuit designs and power management applications. The device is capable of providing low leakage current and low capacitance, making it suitable for use with a variety of power management ICs. The device can be used in voltage switch applications, such as in combination with a voltage regulator, to convert the voltage from one range to another.

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