TZM5250F-GS08 Allicdata Electronics
Allicdata Part #:

TZM5250F-GS08-ND

Manufacturer Part#:

TZM5250F-GS08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER SOD80
More Detail: Zener Diode 20V 500mW Surface Mount SOD-80
DataSheet: TZM5250F-GS08 datasheetTZM5250F-GS08 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 20V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 600 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 15V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Description

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Diodes - Zener - Single

TZM5250F-GS08, or TZMZF-GS08, is a single zener diode that operates in micro-power applications. It is designed to provide a stable reference voltage in low voltage, low power systems, and is a popular choice for many industrial, automotive, and consumer applications. It is capable of a wide range of input currents and provides excellent dynamic performance and superior dropout characteristics.

This diode is designed primarily to limit the voltage in micro-power applications using maximum 8-volt power levels. It is configured with vacuum sealed and air-transition heatsink designs, with secondary load current ranges from 1 mA to 200 mA. It also provides a wide temperature range of operation from -55°C to 125°C.

The TZM5250F-GS08 is composed of two semiconductor layers, a P-doped and N-doped layer. When operational, electrons flow from the N-doped to the P-doped layer. This creates a voltage drop across the diode, which is referred to as the forward P-N junction voltage. The magnitude of this voltage drop is determined by the type of diode used, and in the case of TZMZF-GS08, it is 5.2V.

The TZMZF-GS08 features a high reverse bias breakdown voltage, which is designed to limit the voltage when the output current exceeds its reverse bias rated current. In this way, the voltage remains stable and the power rating is maintained. It also features an internal noise reduction diode which safeguards the diode against noise induced false triggers that can cause malfunction.

The unique noise reduction property of the TZMZF-GS08 allows for its use in a wide range of applications such as overvoltage protection, circuit isolation, battery charging, and temperature sensing. Additionally, the TZMZF-GS08 provides linear regulation of voltage in AC line-powered systems and steady voltage regulation across dc voltage sources.

Some of the key features of the TZMZF-GS08 include a maximum forward current of 2A, a dropout voltage of 3.5V, and an operating temperature range of -55°C to 125°C. It is a RoHS compliant device, with a package size of 2mm x 1.6mm x 0.7mm, offers a wide operating temperature range and excellent quality and reliability. Its surface mount package allows for use in limited space applications, making it suitable for use in a wide range of product designs.

In conclusion, the TZMZF-GS08 is a single zener diode that offers excellent quality and reliable performance for use in a variety of applications. It has a wide range of operating temperature range, a low forward drop and a high reverse bias breakdown voltage for maximum protection in micro-power applications. It is a RoHS compliant device that offers a wide operating temperature range and excellent quality and reliability. Its small package size allows it to be used in limited space applications, making it a great choice for a wide range of product designs. With excellent features and specifications, it is a popular choice for many industrial, automotive, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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