TZM5251C-GS18 Allicdata Electronics
Allicdata Part #:

TZM5251C-GS18-ND

Manufacturer Part#:

TZM5251C-GS18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 22V 500MW SOD80
More Detail: Zener Diode 22V 500mW ±2% Surface Mount SOD-80
DataSheet: TZM5251C-GS18 datasheetTZM5251C-GS18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02249
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 22V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 29 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 17V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Description

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The TZM5251C-GS18 is a single Zener diode designed for a variety of applications. It has an adjustable breakdown voltage range from 1.2V to 10.8V. The diode is compatible with a wide range of environmental conditions, making it suitable for both commercial and industrial applications. The maximum power dissipation at rated breakdown voltage is 20mW.

The TZM5251C-GS18 has a variety of application fields including voltage regulation, DC-DC converters, voltage clamping, lighting protection, and surge protection. In addition, the device can also be used in overvoltage protection, temperature coefficient compensation and switch-mode power supply circuits.

The TZM5251C-GS18 has a reverse breakdown voltage which is adjustable by temperature characteristics. It features excellent electro dynamic parameters, and a low reverse leakage current. This diode can be operated over a wide ambient and junction temperature range, from -55 to +150°C and from +55 to +150°C respectively.

The working principle of the TZM5251C-GS18 is based on the reverse breakdown voltage effect in semiconductor devices. At the breakdown voltage, the junction potential suddenly breaks and a large amount of current starts to flow, causing the diode to be in a reverse breakdown state and insuring the voltage stays below the predetermined breakdown voltage. This mechanism prevents the voltage from going beyond the pre-defined breakdown level and therefore it protects against electrical over-voltage.

The device also features devices complete with robust thermoplastic sealed packaging and built-in temperature coefficient compensation. The optional integrated hysteresis or low zener impedance protects against electrical overshoot during operation. The efficient thermal performance of the device provides reliable operation, even in extreme temperature conditions.

The TZM5251C-GS18 is a reliable and cost effective solution for a variety of applications. Its wide range of adjustable breakdown voltages, robust packaging and temperature coefficient compensation capabilities make it ideal for voltage regulation and other applications.

The specific data is subject to PDF, and the above content is for reference

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