Allicdata Part #: | TZM5259B-GS18-ND |
Manufacturer Part#: |
TZM5259B-GS18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 39V 500MW SOD80 |
More Detail: | Zener Diode 39V 500mW ±5% Surface Mount SOD-80 Min... |
DataSheet: | TZM5259B-GS18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01852 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 39V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 30V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 MiniMELF |
Description
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Diodes are the basic building block of all electronics, playing an important role in the operation of virtually all modern electronic devices. Zener diodes, a type of diode, are designed to allow current to pass in both directions, but with a specified breakdown voltage, which is known as the zener voltage. The TZM5259B-GS18 is a single, 5.2V, low forward voltage drop/high power Zener diode.
The TZM5259B-GS18 is primarily used in reverse voltage protection, overvoltage protection, and voltage clamping applications. For example, it can be used to protect devices from lightning strikes, unrestricted surges, and other electrical transients that can cause damage. It can also be used to help ensure that certain circuits do not exceed a certain voltage, ensuring that devices are not operating above safe operating limits. It can also help protect against reverse bias voltages.
The TZM5259B-GS18 is capable of safely handling high power and can handle up to 1 watt of power. It also has a low breakdown voltage of 5.2V and a low forward voltage drop, which means it can be used in circuits that require its function at low voltages. In addition, it has an industrial temperature range of -55 to +150 Celsius.
The TZM5259B-GS18 works on a process known as negative-resistance breakdown, where the voltage across the junction increases when the electric current through the junction reaches a certain level. This is known as the zener voltage and it is the point at which the diode breaks down, allowing current to flow from the anode to the cathode in both directions.
The TZM5259B-GS18 is designed with a PN junction that is designed for paramount performance. Its design ensures fast switching time when voltage levels increase, facilitating fast signal transmission, and also ensures reverse breakdown protection to ensure the circuit is not damaged by overvoltage or other electrical transients. The diode also has a low capacitance, which means that the diode has minimal loading on the driving signal, making it ideal for use in low-speed signal paths.
The TZM5259B-GS18 is an excellent choice for a wide range of applications, including voltage clamping, overvoltage protection, and reverse voltage protection. It provides efficient protection against overvoltage and other electrical transients, while also enabling fast signal transmission. It is also capable of handling high power and has a low forward voltage drop, making it an excellent choice for low-power circuits.
The specific data is subject to PDF, and the above content is for reference
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