TZM5263F-GS18

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TZM5263F-GS18 is a diode type Zener that belongs to the Single category family. Zener diodes are widely used in various applications and are typically composed of a semiconductor substrate, anode and cathode contacts, and an epitaxial layer for reverse blocking. These diodes are widely used as voltage references, voltage regulators and also in reverse protection circuits.

The TZM5263F-GS18 is designed to maintain a stable voltage level of 18V. It has a peak forward current of 500mA and a continuous forward current of 200mA. It also has a reverse current of 5A and a reverse voltage of 30V. This diode is constructed with a high-quality silicon epitaxial layer, which is designed to withstand higher temperatures and maintain adequate electrical characteristics. The thermal resistance of the TZM5263F-GS18 is 50°C/W. In addition, the diode has very low leakage current, which ensures that it operates reliably under a variety of conditions.

TZM5263F-GS18 is widely used for both low- and high-voltage applications. It is suitable for a variety of areas, including cell phone, amplifier, LCD TV, and personal computer power supplies. In electronic circuits, it can be used for voltage regulation, voltage rectification and reverse blocking. It is most commonly used in voltage-regulating circuits in which a stable voltage level is required. By connecting the diode in series with a power source, it can create a regulated voltage output. The diode will absorb any excess voltage and will not allow the voltage to exceed its rated level.

The TZM5263F-GS18’s working principle is based on the principle of “built-in potential barrier”. The diode is made up of two sections: anode and cathode. A “built-in” barrier is created between the two sections by connecting them in series. The barrier has a breakdown voltage, which is determined by the type of material used to manufacture the diode. When the applied voltage exceeds the breakdown voltage, electrons flow through the diode, allowing current to flow.

The TZM5263F-GS18 is designed to facilitate voltage noise reduction, enhance reliability and stability. It also makes it possible to dynamically adjust power and voltages in response to load requirements. In addition, the diode features a low-on-die temperature rise and high thermal resistance, which prevent it from thermal damage due to overheating caused by excessive current or extended operation.

The TZM5263F-GS18 is an ideal choice for a variety of applications due to its exceptional performance, low voltage on-die temperature, and high thermal resistance. This diode is known for its reliability and can be used in a variety of applications. It is used in various electronic circuits, including voltage regulation, voltage rectification and reverse blocking.

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