Allicdata Part #: | TZX5V6B-TR-ND |
Manufacturer Part#: |
TZX5V6B-TR |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 5.6V 500MW DO35 |
More Detail: | Zener Diode 5.6V 500mW Through Hole DO-35 |
DataSheet: | TZX5V6B-TR Datasheet/PDF |
Quantity: | 1000 |
30000 +: | $ 0.01548 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 2V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes, also known as p-n junctions, are devices that can control the direction and flow of current in circuits. Zener diodes, in particular, are uniquely suited for specific applications. The TZX5V6B-TR is an example of a zener diode that is designed for resistor-network voltage regulation or ultra-fast switching across temperature ranges.
The TZX5V6B-TR has an NPN construction with a heavy thermal oxide thin-film layer on the current controlled transistor part. The oxide layer provides good heat transfer, which helps to improve the switching speed and temperature stability of the diode across the operating range. The diode is shielded by a high-voltage protection guard, which helps protect the diode from high-voltage surges.
This diode has a breakdown voltage of 6V and a maximum clamping voltage of 7.2V. It can handle a peak power of 500mW and can safely dissipate up to 1W of power. Its reverse leakage current is low, typically less than 1.0μA, and its typical clamping factor is 10. The TZX5V6B-TR can be used in a wide range of applications, including power protection, DC-DC conversion, surge protection, LED protection, switching applications, and low capacitance voltage clamping.
The TZX5V6B-TR diode has a working principle that is based on the NPN construction. When positive voltage is applied to the anode of the diode, the voltage begins to increase until it reaches the breakdown voltage. When this point is reached, the diode rapidly switches to a conducting state, allowing current to flow in the forward direction. This current is conducted to the emitter, where it is then passed to the base and then to the collector, completing the circuit.
The TZX5V6B-TR is an excellent choice for many resistor-network voltage regulation or ultra-fast switching applications. It is designed to provide reliable operation, even when dealing with large voltage and current surges. Its low leakage current and high-temperature stability make it a great choice for most applications. The diode can be used for a variety of purposes, such as power protection, DC-DC conversion, surge protection, LED protection, switching applications, and low capacitance voltage clamping.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TZX5V6B-TAP | Vishay Semic... | 0.02 $ | 30000 | DIODE ZENER 5.6V 500MW DO... |
TZX5V1B-TAP | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 5.1V 500MW DO... |
TZX5V1C-TAP | Vishay Semic... | 0.02 $ | 10000 | DIODE ZENER 5.1V 500MW DO... |
TZX5V1A-TR | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 5.1V 500MW DO... |
TZX5V6D-TR | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 5.6V 500MW DO... |
TZX5V1A-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
TZX5V1D-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
TZX5V6A-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.6V 500MW DO... |
TZX5V6C-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.6V 500MW DO... |
TZX5V6D-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.6V 500MW DO... |
TZX5V6E-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.6V 500MW DO... |
TZX5V1B-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
TZX5V1C-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
TZX5V1D-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
TZX5V6A-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.6V 500MW DO... |
TZX5V6B-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.6V 500MW DO... |
TZX5V6C-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.6V 500MW DO... |
TZX5V6E-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 5.6V 500MW DO... |
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