U15F31N

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The U15F31N is a primary field-effect transistor (FET) designed for switching and linear applications in a wide range of digital, mixed-signal, and analog circuits. It is an ideal solution for providing low-power, high-speed switching performance in a variety of device applications.

This FET has a number of unique characteristics that make it a preferred choice for many circuit designs. The U15F31N features a breakdown voltage rating of 12-20V, giving it a higher power capability than most other small-signal FETs. This increased power capability allows the U15F31N to more effectively switch power signals and handle more complex digital switching applications. Additionally, the FET has a low input capacitance of 2pF, allowing it to quickly and accurately switch AC and DC signals.The maximum drain-source current rating is 10A, allowing the U15F31N FET to safely switch even high-current power signals without overloading the device.

The U15F31N is available in three package versions, including a compact SOT-223, the miniature surface-mount SOIC-8, and the roomier TO-220 (power-package) versions. This wide range of package sizes allows designers to choose the version that fits their circuit layout and thermal specifications.

The working principle of the U15F31N FET can be summarized as follows. Upon application of a voltage across the three terminals (gate, source, drain), electrons are drawn to the gate by the attraction of the positive electric field. This causes the channel to form “pins” which further reduce the electrical resistance of the FET and allow current to flow between the source and drain. By varying the voltage applied to the gate, the resistance of the channel can be adjusted, allowing precise control over the current flow.

The U15F31N is an ideal choice for designers seeking to build cost-effective circuits with reliable operation. Thanks to its low on-resistance and low-leakage current, the FET can be used in a variety of applications, including power converters and inverters, analog and digital circuits, switching regulators, and audio amplifiers. The U15F31N is manufactured using Shinden Power Technology^TM, a process that combines two different materials for improved current conduction. This makes the FET more reliable and more efficient than other similarly-priced FETs.

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