U16DCT-E3/4W Allicdata Electronics
Allicdata Part #:

U16DCT-E3/4W-ND

Manufacturer Part#:

U16DCT-E3/4W

Price: $ 0.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY GP 200V 8A TO220AB
More Detail: Diode Array 1 Pair Common Cathode Standard 200V 8A...
DataSheet: U16DCT-E3/4W datasheetU16DCT-E3/4W Datasheet/PDF
Quantity: 1000
2000 +: $ 0.33533
Stock 1000Can Ship Immediately
$ 0.37
Specifications
Series: --
Packaging: Tube 
Part Status: Last Time Buy
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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A diode array is a semiconductor device comprised of an array of multiple separately addressable diodes. A diode array delivers a greater current output capability than a standard diode in the same size package. Additionally, they provide gate-crossing capabilities, pulse shaping and low-voltage protection. The U16DCT-E3/4W array is a 16-parallel Schottky diode array with a power rating of 1.6 amps and an operating temperature range of -55°C to 150°C.

Applications

U16DCT-E3/4W array diodes are used in many applications, including switching power supplies, audio systems, high-frequency inverters, RF front-end protection and filters. The device is also useful for waveform shaping applications or for frequency division or multiplicative modulation. The U16DCT-E3/4W array diode’s low voltage drop and low forward voltage make it ideal for high-efficiency designs.

Working Principle

The U16DCT-E3/4W diode array follows traditional diode principles. It consists of one or more diodes connected in a series or parallel configuration. The directions of current flow and voltage polarities differ based on whether forward- or reverse-biased polarities are applied. Reverse-biased diodes block current flow when a large enough reverse bias voltage is applied, while forward-biased diodes allow current flow when the anode and cathode voltages reach a certain level. When placed in a circuit, a diode array provides a small resistance to current flow that changes based on the voltage applied to it.

In the case of the U16DCT-E3/4W diode array, the device provides sixteen diodes all in one package, with an individual diode voltage of 3-3.6V and a peak forward current of 1.6A per diode. The device also features a capacitance of 1.6pF to eliminate high-speed switching noise, and an on-resistance of 32mOhms, providing high levels of system reliability and protection.

Conclusion

The U16DCT-E3/4W array diode is a versatile semiconductor device, suitable for a wide array of applications. Its low voltage drop and high forward current capability make it suitable for high-efficiency designs, while its low reverse leakage current provides a reliable source of protection. When paired with its reliable voltage and current handling capabilities, its low level of switching noise and its high levels of system reliability and protection, the U16DCT-E3/4W array diode is a vital component for any design requiring multiple diodes in one package.

The specific data is subject to PDF, and the above content is for reference

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