Allicdata Part #: | U441-E3-ND |
Manufacturer Part#: |
U441-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET 2N-CH 25V TO-71 |
More Detail: | JFET 2 N-Channel (Dual) 25V 500mW Through Hole |
DataSheet: | U441-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 6mA @ 10V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 3pF @ 10V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-71-6 |
Supplier Device Package: | -- |
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The U441-E3 is a type of Junction Field Effect Transistor (JFET). Also known as field-effect transistors, JFETs are a significant component of semiconductor electronics and offer a number of advantages compared to other types of transistors. In particular, JFETs are fairly simply constructed around one or more p-n junctions, making them relatively easy to construct and thus relatively affordable.
The U441-E3 consists of a Junction Field Effect Transistor and a metal oxide semiconductor field effect transistor (MOSFET) work together. The Field Effect Transistor, or FET, works by using a weak electric field applied to a gate to control the flow of current between two electrodes. When the electric field is strong enough, it can create a field effect which controls the current flowing between the two electrodes. MOSFETs are similar to JFETs in that they employ a gate region to control the movement of current but, unlike JFETs, the gate region is not part of the actual semiconductor material.
The U441-E3 is an ideal component for applications where the varying of the quality of the carrier system is the primary objective. This is due to its direct-current differential voltage applied between drain and source, which helps to alter the operation of the device between linear and saturation by altering the current flow across the device.
The working principle of the U441-E3 is based on Gate control. It has two n-type regions, referred to as source and drain, and one p-type region, the gate. The U441-E3 has the gate voltage connected to the drain or source. By controlling the gate voltage, it is possible to change the amount of current flowing between the two n-type regions. By adjusting the gate voltage, it is possible to achieve an ideal operating point where the current flows through the device in a manner that suits the application.
The U441-E3 also offers other advantages such as an extended temperature range of operation which makes this FET suitable for a range of applications. It also incorporates an improved isolation between the gate and body of the FET, which makes it resistant to the adverse effects of electromagnetic interference. The lack of a gate positive temperature coefficient feature ensures that the gate voltage remains at a constant level, reducing the need for gate current control.
Amongst other applications, the U441-E3 is often used as an amplifier, due to its high output current and low input impedance. This makes it ideal for audio and video amplification, as it provides both high quality output and a low input capacitance. Additionally, it can be used as a switch for digital logic and in devices for data conversion, as its power requirements are low.
In summary, the U441-E3 is a type of Junction Field Effect Transistor (JFET) which uses Gate control to control the current between two electrodes. It is ideal for applications where the varying of the quality of the carrier system is the primary objective, and is used in a range of applications such as audio and video amplification and digital logic switching. It offers a number of advantages such as an extended temperature range of operation and improved isolation between the gate and body, as well as a low input capacitance.
The specific data is subject to PDF, and the above content is for reference
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