| Allicdata Part #: | UATL30S1C-ND |
| Manufacturer Part#: |
UATL30S1C |
| Price: | $ 0.00 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MMIC AMPLIFIER DIE |
| More Detail: | RF Amplifier IC |
| DataSheet: | UATL30S1C Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Obsolete |
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RF amplifier is an important component for wireless communication and instrumentation, especially wideband, because it can provide high linearity, broad bandwidth and high gain, which makes RF Amplifiers suitable for many applications. The UATL30S1C is a type of RF amplifier, which has various application fields and perform different functions. In this article, the application fields and working principle of UATL30S1C are discussed in detail.
The UATL30S1C is a GaN high power amplifier, which is a high linearity, wide bandwidth and high gain RF amplifier. Its applications include RF power amplifiers, remote sensing applications, Doppler radar, antenna arrays, satellite communication systems, and wireless communication systems. It can also be used as a power amplifier in high-frequency RF systems. The UATL30S1C has excellent amplification characteristics and can provide more than 15 dB of dynamic range, allowing the transmitter to input the required signal power without the risk of amplifier distortion.
The UATL30S1C\'s amplifier configuration is a two-stage amplifier. The first stage is a cascode amplifier, and the output of the cascode is connected to a common-gate configuration, which is the final output. It provides high output power and high linearity for the device. The common-gate configuration has a very low noise figure, which results in a good overall input/output noise performance at high powers.
The UATL30S1C uses GaN high-power devices to provide higher linearity, higher gain and improved power efficiency compared to conventional amplifiers. This is important because it can reduce the total circuitry size and power consumption, making the system more cost-effective. The device has a wide gain dynamic range, up to 15 dB, which makes it suitable for wide-ranging RF power requirements.
The UATL30S1C amplifier is a high-linearity, wide bandwidth and high-power amplifier and it can be used in many different types of applications. It is Class A qualified and it has high linearity, wide bandwidth, and high gain characteristics, allowing it to operate efficiently at both low and high frequencies. The device has excellent thermal and mechanical properties, designed to reduce the temperature inside the device even at high output power levels. The UATL30S1C amplifier is also resistant to electromagnetic interference, making it suitable for use in many types of applications.
In conclusion, the UATL30S1C is a versatile RF amplifier, with various application fields and working principle. It provides high linearity, wide bandwidth and high gain, making it suitable for many wireless communication and instrumentation applications. It has excellent thermal and mechanical properties, designed to reduce the temperature inside the device even at high output power levels. The UATL30S1C amplifier is also resistant to electromagnetic interference, allowing it to operate efficiently at both low and high frequencies. Therefore, the UATL30S1C is a great option for various RF applications.
The specific data is subject to PDF, and the above content is for reference
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UATL30S1C Datasheet/PDF