UB10BCT-E3/8W Discrete Semiconductor Products |
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Allicdata Part #: | UB10BCT-E3/8W-ND |
Manufacturer Part#: |
UB10BCT-E3/8W |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 100V 5A TO263AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 100V 5A... |
DataSheet: | UB10BCT-E3/8W Datasheet/PDF |
Quantity: | 1000 |
1600 +: | $ 0.31623 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
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Diodes - Rectifiers - Arrays
UB10BCT-E3/8W Application Field and Working Principle
In modern day electronics, the UB10BCT-E3/8W diode is one of the most popular rectifier-type daisy-chained arrays. This particular application field is commonly used for various voltage-dependent switching applications, including but not limited to audio amplifiers, motor controllers, and circuit power supplies. A daisy-chained array is essentially a collection of two or more discrete diodes connected in series or parallel, which allows for operations of higher current capacities as well as more precise applications involving high voltage electrical circuits.
The working principle of the UB10BCT-E3/8W diode array is quite straightforward. The first diode in the series is known as the anode, while the last diode in the series is known as the cathode. When a forward voltage differential is applied between the anode and cathode terminals, the diodes display a low on-state resistance, and as a result, current is allowed to flow through the diode array. As current increases, the voltage across the diode array also increases, which ultimately limits the current that can flow through the array.
The amount of voltage that can be applied to the UB10BCT-E3/8W diode array is determined by its forward breakdown voltage. When the applied reverse voltage exceeds the breakdown voltage, there will be an avalanche breakdown and the diode will cease to function. This property is extremely useful for voltage regulation and protection, as it prevents the diode from forward biasing when extremely high voltage is applied to it, thus protecting the circuit from any damage.
The UB10BCT-E3/8W diode array is also capable of displaying a high forward voltage drop and high current handling capability, which makes it an ideal choice for power switching applications. Its low on-state resistance also allows for efficient current conduction, making it a viable choice for devices and systems with varying loads.
Finally, due to the diode array\'s low reverse leakage current, it can be used in a wide range of temperature-sensitive applications. This property allows the diode array to remain functional in extreme temperatures - since it does not absorb excess heat and subsequently dissipate it - enabling it to work in a wide range of conditions.
In conclusion, the UB10BCT-E3/8W diode array is a highly-efficient rectifier-type daisy-chained array which can be used in a variety of applications. Its low on-state resistance, high current handling capability, high forward voltage drop, low reverse leakage current, and temperature stability make it an ideal choice for controlling and regulating the current and voltage in high voltage circuits, as well as providing protection.
The specific data is subject to PDF, and the above content is for reference
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