UCC27423DR Allicdata Electronics
Allicdata Part #:

296-41798-2-ND

Manufacturer Part#:

UCC27423DR

Price: $ 0.62
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC MOSFET DRIVR DUAL HS 4A 8SOIC
More Detail: Low-Side Gate Driver IC Inverting 8-SOIC
DataSheet: UCC27423DR datasheetUCC27423DR Datasheet/PDF
Quantity: 1000
1 +: $ 0.62000
10 +: $ 0.60140
100 +: $ 0.58900
1000 +: $ 0.57660
10000 +: $ 0.55800
Stock 1000Can Ship Immediately
$ 0.62
Specifications
Logic Voltage - VIL, VIH: 1V, 2V
Base Part Number: UCC27423
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 20ns, 15ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 4A, 4A
Series: --
Voltage - Supply: 4 V ~ 15 V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMIC - Gate Drivers are essential components of power management integrated circuits (PMICs) and serve to drive various switching devices such as mosfets, BJTs, relays, and SCRs. As part of a PMIC, they enable power management between the power supply and load, and can provide rapid charge and discharge currents. UCC27423DR is an example of PMIC Gate Drivers. This application field and working principle will be discussed in more detail in this article.

Application Field

The UCC27423DR is a high-voltage, high-current, P-channel MOSFET gate driver intended for switching applications up to 20V. It features 3.3V to 20V supply voltage operation, 10-bit internal current source, adjustable rise and fall times, and protection features such as undervoltage lockout and thermal shutdown. These features make it suitable for use in a wide range of motor control, AC/DC power supply and lighting applications.

The UCC27423DR also provides a wide range of integrated technologies to protect against system failure. For example, undervoltage lockout protects against low input voltage and thermal shutdown prevents device overheating. In addition, the device offers an adjustable off-time between the turn-on and turn-off of the transistor, which allows the user to control the exact switching times of the transistor.

Working Principle

The UCC27423DR is a P-channel MOSFET gate driver which is designed to drive high current MOSFETs with a logic signal. It functions by sensing the logic signal and driving the gate high or low accordingly. When the logic signal is high, the P-channel MOSFET is bypassed and the gate voltage is pulled high. When the logic signal is low, the device senses the current and drives the gate low. This effectively turns the transistor on and off. The UCC27423DR is able to drive a range of MOSFETs, including low voltage and high voltage parts.

It incorporates an adjustable delay in the turn-on sequence so that the MOSFET is not driven to its rated voltage instantly, but at a more gradual rate. This prevents excess transients in the gate driver output and enables it to drive a wide range of MOSFETs in a variety of circuit topologies. The device also incorporates under voltage lockout and thermal shutdown protection which protect the MOSFET from unexpected over-voltage and over-temperature events.

The UCC27423DR is a high-voltage, high-current, P-channel MOSFET gate driver suitable for a variety of motor control, AC/DC power supply and lighting applications. Its adjustable on/off delay, thermal shutdown and undervoltage lockout protection features make it a safe, reliable and efficient choice for driving high-current switching devices.

The specific data is subject to PDF, and the above content is for reference

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