UD2006FR Allicdata Electronics
Allicdata Part #:

UD2006FR-ND

Manufacturer Part#:

UD2006FR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 600V 20A TO220F
More Detail: Diode Standard 600V 20A Through Hole TO-220F-2FS
DataSheet: UD2006FR datasheetUD2006FR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 20A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Description

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The UD2006FR is a single rectifying diode that belongs to the UD2006 product family. It is suitable for general purpose power supply rectification and can withstand a surge current up to 25A. The UD2006FR is available in a P-QFN 3mm x 3mm package with a maximum forward voltage drop of 0.45V.

The UD2006FR rectifying diode implements private filtering systems and assists as a protection element in DC/DC converters, AC/DC converters, UPS systems, automotive applications and other electronic circuits. It can also function as a steering diode or a free-wheel diode.

The UD2006FR application field mainly comprises UPS systems, power converters and applications that require high surge current protection. It also finds application in automotive applications as a steering diode, and as a protection element in DC/DC and AC/DC converters.

The UD2006FR offers low forward voltage drop and a peak surge current rating of 25A. The diode is available in 3mmx3mm P-QFN package and is RoHS compliant.

The UD2006FR rectifying diode is constructed from a thin film of silicon which is doped with impurities, thus forming a junction between two semiconductor junctions – namely N- type and P-type. The N-type junction has an excess of electrons, while the P-type junction is positively charged, since it has an excess of holes in the valence band. The junction between the N-Dope and P-Dope is referred to as the depletion layer, and current only flows between the two junctions when a voltage of higher magnitude is applied.

When the diode is reverse biased, the electric field associated with applied voltage is insufficient to overcome the built- in electric field associated with the depletion layer, and no current flows thereby making the diode act as an insulator to the flow of current. Conversely, when the diode is forward biased, the built-in electric field is overcome and current can flow through the diode.

The UD2006FR diode is available in 2-lead (2A) or 3-lead (2B) packages that also feature an anode designation marking. The diode’s ability to handle a high surge current of 25A makes it ideal for applications where an agile response is required or where high reverse voltage protection is needed. Additionally, the low forward voltage drop of 0.45V combined with the maximum surge current of 25A makes the UD2006FR an excellent choice for power supply rectification.

In conclusion, the Ud2006FR rectifying diode is an ideal component for applications that require robust surge current protection and consistent power supply rectification in addition to meeting stringent size and compliance requirements. Furthermore, the low forward voltage drop and peak surge current rating make the UD2006FR a highly efficient component in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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