Allicdata Part #: | UF1GA0G-ND |
Manufacturer Part#: |
UF1G A0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 400V 1A DO204AL |
More Detail: | Diode Standard 400V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | UF1G A0G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.04755 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 17pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A UF1G A0G is a diode rectifier that was specifically designed for low-loss power applications. It requires a low forward voltage drop of 0.8 V and a slightly higher reverse recovery time of 0.2 to 0.3 μs. This feature makes it suitable for power-supply applications and ensures the circuit is not compromised when experiencing transient loads. This diode can support a maximum continuous forward current of 0.3 A and an operating temperature range between -55°C and 150°C.
The UF1G A0G diode is capable of being used in a variety of power-electrical circuits. This includes applications such as step-down rectification, energy-recovery circuits, and switching power-supply applications. In particular, it is highly recommended for any applications requiring a high reverse-recovery time like rectifier circuits and low-loss power supplies. Additionally, this device can be used as part of a bridge rectifier circuit, providing a much more efficient way to convert AC power to DC power.
This diode features superior forward current performance in comparison to its counterparts. When switching from forward to reverse mode, it requires a fast reverse recovery time and a low-forward voltage drop. Also, the forward voltage characteristics remain quite stable despite fluctuations in temperature or load. Additionally, this device is fairly robust, featuring a maximum continuous forward current of 0.3 A, max reverse current of 0.33 mA, a max surge current of 6 A, and an operating temperature range of -55°C to 150°C.
The UF1G A0G provides several key advantages. For one, it is capable of operating at higher temperatures and under more severe thermal conditions. Secondly, it has a low forward voltage drop. This means that it can be used in circuits which require precision control and less power losses. Finally, its low-loss power applications make it an ideal choice for energy and energy-recovery applications.
The UF1G A0G is constructed using a PN junction, a metal-oxide semiconductor (MOS), and a protective coating. This combination allows it to have a low-forward voltage drop and a fast reverse recovery time. Additionally, the protective coating protects the PN junction from being damaged, thus allowing for reliable operation. Furthermore, the MOS provides several key benefits such as a lower forward voltage drop, a faster reverse recovery time, and a better efficiency rating.
In conclusion, the UF1G A0G diode is an effective solution for low-loss power applications. Due to its low-forward voltage drop and fast reverse recovery time, it is useful for a variety of power-electronic applications. Furthermore, its robust construction allows it to operate in high-temperature and harsh thermal circumstances. Also, its PN junction, MOS, and protective coating give it desirable characteristics like low-forward voltage drop and fast recovery time. For all these reasons, the UF1G A0G diode is an excellent choice for any application that requires high-power efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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