Allicdata Part #: | UF1MA0G-ND |
Manufacturer Part#: |
UF1M A0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 1A DO204AL |
More Detail: | Diode Standard 1A Through Hole DO-204AL (DO-41) |
DataSheet: | UF1M A0G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.04755 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 17pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A Unijunction Field Effect Transistor (UF1M) is a type of single-rectifying field effect transistor that has a junction gate between two resistors and a single, unconnected gate electrode (gate G). These transistors can be used in a wide variety of applications and are very useful in switching circuits and in high frequency amplifier (HFA) circuits.
As a field effect transistor, the UF1M works by creating an electric field across its circuit that causes current to flow through a path. This field can be adjusted by the gate electrode, which controls the boundaries and strength of the electric field. When voltage is applied to the gate, it affects the electrostatic field, creating an electric current.
Compared to a normal field effect transistor, such as a field effect transistor (FET), the UF1M does not have a source connection, because the source is connected to the two resistors and the gate. Instead, the gate generates its own current, and the current flow follows the gate voltage.
The structure of the UF1M is very straightforward. It uses two semiconductor rectifiers connected in series. The rectifiers allow the device to alternatively conduct current in only one direction, determined by the gate voltage. This means that the current is blocked when there is reverse voltage at the gate. The rectifiers also limit the voltage of the device, so it can handle high voltage without damage.
The advantages of using a UF1M instead of a normal FET include higher resistance to damage, higher operating frequencies, and less power consumption. However, one disadvantage is that it is more prone to oscillations, which can reduce its performance.
The UF1M can be used in a variety of applications. It can be used as a switch in digital circuits, as an amplifier in audio circuits, and as a linear regulator in power supplies. It is also used in high frequency amplifiers (HFAs) and other devices that require high-frequency control.
Due to the fact that UF1M is a single-rectifier field effect transistor, it is classified as one of the diodes and rectifiers in the electronics industry. Although it is not as widely used as other types of transistors, it is a very useful device for a variety of applications. Its main advantages are its relative low power consumption, its high operating frequency, and its ability to be used as a switch, an amplifier, and a regulator.
The specific data is subject to PDF, and the above content is for reference
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