UG18CCT-E3/45

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UG18CCT-E3/45 Application Field and Working Principle

The UG18CCT-E3/45 is a diode array commonly used in a variety of electronic applications. It consists of two or more diodes connected in parallel with each other inside a single package. The package is typically made of plastic housing, which helps with heat dissipation, and provides an insulating layer for the diodes. The dual-diode configuration of the UG18CCT-E3/45 allows for independent operation on each diode, but their combined current capacity and voltage rating is much greater than a single diode\'s.

Uses and Applications

UG18CCT-E3/45 is a popular choice for energy-saving applications, as it can reduce switching losses, shield against voltage transients, and contains built-in protection for short circuits. It\'s also a popular choice for high-frequency switching applications, such as radio-frequency electronics (RFE), and optical communications. It\'s often used in circuit protection applications to protect semiconductor devices from over-current conditions, and in power supply circuits to reduce power dissipation.

In many systems, UG18CCT-E3/45 arrays are used to replace large and inefficient groups of single diodes with a smaller and more efficient grouping of dual diodes. By using fewer components, these arrays can help reduce material costs and board space. Furthermore, as the diodes can be be thermally coupled to reduce thermal resistance, the arrays can help to improve thermal performance of the system.

Working Principle

When a voltage source is applied to the UG18CCT-E3/45, the diodes are reverse-biased and no current flows. However, if the applied voltage is greater than the breakdown voltage of the diodes, a small amount of current can begin to flow. This current is called the reverse-leakage current, or reverse saturation current.

When the applied voltage is strong enough, the breakdown current rise exponentially. This process is known as the avalanche breakdown effect. Once avalanche breakdown occurs, the diodes will act like a low-resistance conductor, allowing a large amount of current to flow through them. This current is limited by the maximum average current rating of the diodes.

By using two or more diodes connected in parallel, the maximum current rating of the array increases by the same factor. This allows the array to handle higher voltage transients and over-current conditions with minimal damage to the semiconductor device.

Conclusion

The UG18CCT-E3/45 is a popular choice for applications needing reliable protection against over-current conditions and voltage transients. Its dual-diode configuration helps to increase current capacity, and reduce material costs and board space. Furthermore, the avalanche breakdown effect helps reduce the risk of damage from high voltage transients, making it an excellent choice for high-frequency switching applications.

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