Allicdata Part #: | UG1B-E3/73-ND |
Manufacturer Part#: |
UG1B-E3/73 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO204AL |
More Detail: | Diode Standard 100V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | UG1B-E3/73 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06061 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Introduction
UG1B-E3/73 is a diode rectifier composed of a single piece of silicon material. It is most often used as a low-voltage rectifier in electronics applications such as in miniaturized switching power supplies and other electronic circuits.
Design and Construction
UG1B-E3/73 utilizes silicon material in its design and construction. The single piece of silicon material has three p-type and three n-type diodes connected in a bridge formation. This bridge formation provides for a single forward flow current and a blocking reverse flow current. The entire structure of the diode rectifier is made from the same silicon material, providing for a reliable low-voltage rectifier with low power losses.
Properties and Characteristics
UG1B-E3/73 has properties and characteristics including its maximum blocking voltage of 20V DC, a forward voltage drop of 1.2V and a maximum reverse current of 175mA. Considered one of the most reliable rectifier configurations, it has a relatively low forward current drop and is able to accommodate up to 75 W of continuous load power. Additionally, the bridge bridge configuration provides for a higher surge surge rating technology, allowing the UG1B-E3/73 to operate in circuit with high input surges of up to 200 W.
Working principle
UG1B-E3/73 is based on the principle of rectification, wherein a single forward flow current is established through the bridge configuration. This is accomplished by the use of the three p-type and three n-type diodes in a bridge formation. When a DC voltage is applied across the bridge, current will flow in the forward direction, establishing a single forward flow current. In the reverse direction, the bridge will be blocked, preventing current from flowing in the reverse direction.
Application Field
UG1B-E3/73 provides efficient performance as a low-voltage rectifier in a number of electronic applications, such as in miniaturized switching power supplies and other electronic circuits. It is also used in applications where low power loss and a high surge surge rating are important, such as in HVAC, automotive and industrial controllers. The versatile and reliable diode rectifier is widely used in various electronic devices and systems.
Conclusion
Overall, the UG1B-E3/73 is an effective and reliable diode rectifier for use in a variety of electronics applications. The bridge bridge configuration and single silicon material design provides for efficient performance, low power loss and a high surge rating. The rectifier is widely used in a number of electronic devices and systems that require power conversion.
The specific data is subject to PDF, and the above content is for reference
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